Search Results - "Abelein, U."

Mission Profile Clustering Using a Universal Quantile Criterion by Hirler, A., Abelein, U., Buttner, M., Fischbach, R., Jerke, G., Krinke, A., Simon, S.

“…The current trend in the automotive industry towards increasingly detailed and more granular mission profiles (MPs) is also giving rise to an enormous number…”
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Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability by Hirler, A., Biba, J., Alsioufy, A., Lehndorff, T., Sulima, T., Lochner, H., Abelein, U., Hansch, W.

“…Lifetime and duty cycles of automotive electronics are increasing, inducing new challenges to reliability predictions and testing. For qualification purposes,…”
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Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS) by Abelein, U., Born, M., Bhuwalka, K.K., Schindler, M., Schlosser, M., Sulima, T., Eisele, I.

“…This letter presents experimental results and explanations on the reduced degradation caused by hot carriers of the vertical impact-ionization MOSFET (I-MOS)…”
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The Impact Ionization MOSFET (IMOS) as low-voltage optical detector by Schlosser, M., Iskra, P., Abelein, U., Lange, H., Lochner, H., Sulima, T., Wiest, F., Zilbauer, T., Schmidt, B., Eisele, I., Hansch, W.

“…Avalanche photodiodes are widely used in a variety of applications. However, they need a high supply voltage. We propose to use the Impact Ionization MOSFET…”
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Sub-50 nm high performance PDBFET with impact ionization by Born, M., Abelein, U., Bhuwalka, K.K., Schindler, M., Schmidt, M., Ludsteck, A., Schulze, J., Eisele, I.

“…Experimental results obtained with MBE-grown vertical planar-doped-barrier MOSFET (PDBFET) are presented. The device features an excellent I ON / I OFF ratio…”
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Complexity, quality and robustness - the challenges of tomorrow's automotive electronics by Abelein, U., Lochner, H., Hahn, D., Straube, S.

“…Developing a state-of-the-art premium car means implementing one of the most complex electronic systems mankind is using in daily life. About 100 ECU's with…”
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Considering diagnosis functionality during automatic system-level design of automotive networks by Eberl, Michael, Glaß, Michael, Teich, Jürgen, Abelein, Ulrich

“…Today, design automation approaches for automotive E/E-architectures focus solely on application functionality, neglecting firmware-related functionalities…”
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Towards a holistic framework for describing and evaluating business benefits of a service oriented architecture by Abelein, U., Habryn, F., Becker, A.

“…Though SOA has received a major attention over the past years, many companies still struggle to evaluate the benefits of adopting this technology. Indeed its…”
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A proposal for enhancing user-developer communication in large IT projects by Abelein, U., Paech, B.

“…A review of the literature showed that the probability of system success, i.e. user acceptance, system quality and system usage, can be increased by…”
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Vertical 40 nm Impact Ionization MOSFET (I-MOS) for high temperature applications by Abelein, U., Assmuth, A., Iskra, P., Reinl, M., Schlosser, M., Sulima, T., Eisele, I.

“…For the first time we present high temperature electrical characteristics of the vertical Impact Ionization MOSFET. The design of this device suppresses…”
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Tunnel FET: A CMOS Device for high Temperature Applications by Born, M., Bhuwalka, K.K., Schindler, M., Abelein, U., Schmidt, M., Sulima, T., Eisele, I.

“…This paper presents experimental data on the temperature dependence of silicon tunnel field effect transistors (FETs) and corresponding simulations. It shows…”
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Structural In-Field Diagnosis for Random Logic Circuits by Cook, A., Elm, M., Wunderlich, H., Abelein, U.

“…In-field diagnosability of electronic components in larger systems such as automobiles becomes a necessity for both customers and system integrators…”
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A Novel Vertical Impact Ionisation MOSFET (I-MOS) Concept by Abelein, U., Born, M., Bhuwalka, K.K., Schindler, M., Schmidt, M., Sulima, T., Eisele, I.

“…This paper presents experimental results of a novel vertical impact ionisation MOSFET (I-MOS). The device consists of a vertical gated triangular barrier diode…”
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