Search Results - "Abdolkader, Tarek M"
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From Crystalline to Low-cost Silicon-based Solar Cells: a Review
Published in SILICON (01-04-2022)“…Renewable energy has become an auspicious alternative to fossil fuel resources due to its sustainability and renewability. In this respect, Photovoltaics (PV)…”
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Investigation of Polymer/Si Thin Film Tandem Solar Cell Using TCAD Numerical Simulation
Published in Polymers (26-04-2023)“…The current study introduces a two-terminal (2T) thin-film tandem solar cell (TSC) comprised of a polymer-based top sub cell and a thin crystalline silicon…”
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Comprehensive Review on Thin Film Homojunction Solar Cells: Technologies, Progress and Challenges
Published in Energies (Basel) (01-05-2023)“…With the aim of achieving high efficiency, cost-effectiveness, and reliability of solar cells, several technologies have been studied. Recently, emerging…”
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Carrier-Selective NiO/Si and TiO2/Si Contacts for Silicon Heterojunction Solar Cells
Published in IEEE transactions on electron devices (01-09-2016)“…Carrier-selective contacts based on thin oxides of nickel and titanium are computationally investigated for heterojunction silicon solar cells. Replacing the…”
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5
Performance optimization of single-layer and double-layer high-k gate nanoscale ion-sensitive field-effect transistors
Published in Sensors and actuators. B, Chemical (15-04-2018)“…•Numerical simulation study of ISFET pH-sensor with high-k gate insulator.•Evaluation and comparison of six high-k gate materials for optimized ISFET…”
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6
Evaluation of a proposed barium di-silicide tandem solar cell using TCAD numerical simulation
Published in Optical and quantum electronics (01-05-2023)“…Barium di-silicide (BaSi 2 ) material has attracted noteworthy interest in photovoltaics, thanks to its stability, abundant nature, and excellent production…”
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Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells
Published in IEEE transactions on electron devices (01-04-2019)“…Polycrystalline silicon on oxide (POLO) junction passivating contacts have recently been demonstrated as carrier selective contacts for high-efficiency silicon…”
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A numerical simulation tool for nanoscale ion-sensitive field-effect transistor
Published in International journal of numerical modelling (01-11-2016)“…Summary In this work, a self‐contained numerical simulation tool for nanoscale Ion‐Sensitive Field‐Effect Transistor (ISFET) is developed. The tool is based on…”
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Efficiency Boosting of 4-T Bifacial Dual-Textured Perovskite/Perl Silicon Tandem Solar Cells: Process and Device TCAD Simulation Study
Published in SILICON (01-09-2024)“…Perovskite/Silicon tandem solar cells have earned substantial attention in the field of photovoltaics (PVs) due to their potential high-efficiency energy…”
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10
Compact model for ballistic MOSFET-like carbon nanotube field-effect transistors
Published in International journal of electronics (02-01-2016)“…In this work, a compact model for MOSFET-like ballistic carbon nanotube field-effect transistors (CNFETs) is presented. The model is based on calculating the…”
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Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
Published in International journal of numerical modelling (01-07-2011)“…Quantum effects play an important role in determining the double‐gate (DG) MOSFETs characteristics. The non‐equilibrium Green's function formalism (NEGF) in…”
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A new approach for numerical simulation of quantum transport in double-gate SOI
Published in International journal of numerical modelling (01-11-2007)“…Numerical simulation of nanoscale double‐gate SOI (Silicon‐on‐Insulator) greatly depends on the accurate representation of quantum mechanical effects. These…”
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13
Design and analysis of Sb2S3/Si thin film tandem solar cell
Published in Solar energy materials and solar cells (01-05-2023)“…Antimony sulfide (Sb2S3) and thin crystalline silicon (c-Si) are considered suitable top- and bottom-cell candidates for tandem solar cells (TSCs), owing to…”
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FETMOSS: a software tool for 2D simulation of double-gate MOSFET
Published in International journal of numerical modelling (01-07-2006)“…A software tool for the 2D simulation of double‐gate SOI MOSFET is developed. The developed tool is working under MATLAB environment and is based on the…”
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15
Carrier-Selective NiO/Si and TiO 2 /Si Contacts for Silicon Heterojunction Solar Cells
Published in IEEE transactions on electron devices (01-09-2016)Get full text
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Carrier-Selective NiO/Si and TiO sub(2)/Si Contacts for Silicon Heterojunction Solar Cells
Published in IEEE transactions on electron devices (01-09-2016)“…Carrier-selective contacts based on thin oxides of nickel and titanium are computationally investigated for heterojunction silicon solar cells. Replacing the…”
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Journal Article -
17
Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors
Published in Applied physics letters (07-02-2011)“…We present a rigorous analytical model for the movement of light spot emitted in single-wall nanotube transistors (SWNTs) including the dependence of this…”
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Efficient Multi-Scale Self-Consistent Simulation of Planar Schottky-Barrier Carbon Nanotube Field-Effect Transistors and Arrays
Published in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium (01-06-2010)“…A numerical simulation tool for Schottky-Barrier Carbon Nanotube Field-Effect Transistors (SB-CNFETs), based on self-consistent solution of Poisson and…”
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Conference Proceeding -
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Quantum transport based simulation and design optimization of a 10 nm FinFET
Published in 2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era (01-04-2009)“…The International Technology Roadmap for Semiconductors (ITRS) projected value for the High Performance (HP) MOSFET channel length is 10 nm at the year 2016…”
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Conference Proceeding -
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Analytical model for ballistic MOSFET-like carbon nanotube field-effect transistors
Published in 2013 Saudi International Electronics, Communications and Photonics Conference (01-04-2013)“…An analytical model is developed for the carrier density in MOSFET-like carbon nanotube field-effect transistors in terms of surface potential. This model is…”
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Conference Proceeding