Investigation of DW Spintronic Memristor performance in 2T1M Neuromorphic Synapse

Memristor, the two-terminal memory-resistance device discovered by Chua in 1971, is a promising solution for future processing problems. Its CMOS integration compatibility and large resistance in small size, makes it very successful candidate for large-scale systems like Neural Networks. In last dec...

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Bibliographic Details
Published in:	2020 2nd Novel Intelligent and Leading Emerging Sciences Conference (NILES) pp. 573 - 577
Main Authors:	Abdelmagid, Yasmin K., Nawar, Renad T., Rabie, Mennatullah K., Tulan, Ahmed S., Hassan, Ahmed H., Saleh, Andoleet, Mostafa, Hassan
Format:	Conference Proceeding
Language:	English
Published:	IEEE 24-10-2020
Subjects:	IoT Hardware Acceleration Low-Power Circuits Magnetization Memristors Neuromorphic Synapse Resistance Spintronic Memristor Spintronics Synapses Transistors Urban areas
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Summary:	Memristor, the two-terminal memory-resistance device discovered by Chua in 1971, is a promising solution for future processing problems. Its CMOS integration compatibility and large resistance in small size, makes it very successful candidate for large-scale systems like Neural Networks. In last decade, memristors were used in many Neuromorphic Synapses for its advantage of combining processing (dot-product) and memory in same device. There are different materials that can be used to fabricate memristors. In this paper, a comparison between spintronic and TiO2-resistive memristor in two-transistors-one memristor synapse, is introduced. The work was done on Cadence Virtuoso with using Verilog-A for memristor modeling. The comparison reveals that the synaptic implementation with a spintronic memristor is more efficient when high speed is needed. However, the resistive memristor is more adequate due to its lower power dissipation.
DOI:	10.1109/NILES50944.2020.9257896