Search Results - "Abdellaoui, T"

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    Study of n + type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels by Abdellaoui, T., Daoudi, M., Bardaoui, A., Chtourou, R.

    Published in Applied surface science (01-08-2010)
    “…Photoluminescence (PL) analysis is used to study porous layers elaborated by electrochemical etching of n + Si-doped GaAs substrate with different etching…”
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    Journal Article
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