Search Results - "AVEROUS, M"

Ultrasonography of the spermatic cord in children with testicular torsion: impact on the surgical strategy by Kalfa, N, Veyrac, C, Baud, C, Couture, A, Averous, M, Galifer, R B

“…Many surgeons advocate systematic exploration for acute scrotum rather than risking a misdiagnosis of testicular torsion. Study of testicular vascularization…”
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Study of PbSe layer oxidation and oxide dissolution by Gautier, C, Cambon-Muller, M, Averous, M

“…The presence of contamination at the Pb/p-PbSe interface corresponding to a Schottky contact leads to the formation of an n-type inversion layer resulting in…”
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Posterior urethral valves: prenatal diagnosis, neonatal data and outcome by Trellu, M, Adra, A-L, Mouba, J-F, Lopez, C, Averous, M, Galifer, R-B, Dalla-Vale, F, Ichay, L, Morin, D

“…To evaluate the impact of prenatal diagnosis on the epidemiology and outcome of children with posterior urethral valves (PUV), considering that today…”
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SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si by Pezoldt, J., Zgheib, Ch, Masri, P., Averous, M., Morales, F. M., Kosiba, R., Ecke, G., Weih, P., Ambacher, O.

“…SiC/Si(111) heterostructures formed by using an alternative method for stress relaxation were investigated by SIMS and AES. The applied stress reduction method…”
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Sulfide films on PbSe thin layer grown by MBE by Gautier, C, Breton, G, Nouaoura, M, Cambon, M, Charar, S, Averous, M

“…The growth of PbSe layer on Si(111) substrate via a CaF 2 thin buffer layer was realized by Molecular Beam Epitaxy (MBE). The process for forming native…”
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(AlN) x(SiC) 1− x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition by Masri, P., Rouhani Laridjani, M., Pezoldt, J., Yankov, R.A., Skorupa, W., Averous, M.

“…In this work, we present a methodology which enables to optimize the composition x of (AlN) x (SiC) 1− x buried layers implanted in 6H–SiC host material. Our…”
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Evaluation of SiC as a substrate material for nitride materials heteroepitaxy by Masri, P., Rouhani Laridjani, M., Breton, O., Averous, M.

“…We present a methodology based on the elasticity theory of strained interfaces to optimize semiconductor heterointerfaces. For GaN heteroepitaxy, an…”
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Optimization of MBE p-PbSe/Si (1 1 1) growth by Gautier, C, Cambon, M, Breton, G, Nouaoura, M, Averous, M

“…The adherence and properties of p-type PbSe layer grown on CaF 2//Si(1 1 1) by molecular beam epitaxy (MBE) can be improved using an additional stage,…”
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Optimization of 3C–SiC/Si heterointerfaces in epitaxial growth by Masri, P., Rouhani Laridjani, M., Wöhner, T., Pezoldt, J., Averous, M.

“…In this article, we present the basic formalism of the S-correlated theory of misfit induced interface superstructures (MIIS) and nucleation centers for misfit…”
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The physics of heteroepitaxy of 3C–SiC on Si: role of Ge in the optimization of the 3C–SiC/Si heterointerface by Masri, P, Moreaud, N, Rouhani Laridjani, M, Calas, J, Averous, M, Chaix, G, Dollet, A, Berjoan, R, Dupuy, C

“…We demonstrate that the S-correlated theory of misfit induced superstructures and its continuity criteria, defined within the framework of the elasticity…”
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Physics of epitaxy and c-BN films optimized growth by Masri, P, Mortet, V, Rouhani Laridjani, M, Averous, M

“…The cubic zinc-blende phase of boron nitride (c-BN) affords a plethora of potential applications based on material hardness, low chemical reactivity, high…”
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Les valves de l’urètre postérieur. État des lieux en Languedoc-Roussillon de 1998 à 2007 : données anténatales, néonatales et devenir à moyen terme by Trellu, M., Adra, A.-L., Mouba, J.-F., Lopez, C., Averous, M., Galifer, R.-B., Dalla-Vale, F., Ichay, L., Morin, D.

“…Les valves de l’urètre postérieur (VUP) peuvent constituer, en présence de signes anténatals de gravité, un motif d’interruption médicale de grossesse (IMG)…”
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Study of the first stage of PbSe growth on Se-terminated CaF2 surface by Breton, G., Nouaoura, M., Gautier, C., Cambon, M., Masri, P., Charar, S., Averous, M., Touhari, F., Ribes, V.D.

“…Heterostructures of IV–VI compounds, such as epitaxial films of PbSe grown on Si(111) via a CaF2 layer, have been the object of increasing scientific interest…”
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Sleep polygraphic studies using cystomanometry in twenty patients with enuresis by Robert, M, Averous, M, Besset, A, Carlander, B, Billiard, M, Guiter, J, Grasset, D

“…Polygraphic exploration during sleep using cystomanometry was performed in 20 patients aged 7-17 years with primary (17) or secondary (3) enuresis. In this…”
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Effect of chemical preparation of Si(1 1 1) surfaces on the CaF2 growth by BRETON, G, NOUAOURA, M, GRATENS, X, LAIRE, O, TOUHARI, F, CHARAR, S, AVEROUS, M

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Elasticity-Based Approach of Interfaces: Application to Heteroepitaxy and Hetero-Systems by Masri, P., Stauden, Th, Pezoldt, J., Averous, M.

“…In this paper, we discuss the validity of the S‐correlated theory of misfit‐induced interface superstructures (MIIS) and nucleation centers for misfit…”
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Excitonic properties and magnetooptical characterization of (Zn, Cd)Se/ZnSe heterostructures by RAJIRA, A, ABOUNADI, A, COQUILLAT, D, AVEROUS, M, CALAS, J, CLOITRE, T

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Epitaxy induced phase stabilization: a comparative experimental and elasticity-based theoretical study on MBE grown PbSe/CaF2/Si epilayer by Breton, G, Maurice, T, Masri, P, Charar, S, Averous, M

“…Modern epitaxial growth techniques show that material-phase stabilization can be achieved by epitaxial growth provided that suitable substrate (s) are used…”
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Annealing under vacuum and Se flux of CaF2 molecular beam epitaxy surfaces prior to PbSe/CaF2/Si growth by BRETON, G, NOUAOURA, M, GAUTIER, C, CAMBON, M, CHARAR, S, AVEROUS, M, RIBES, V

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Mid Infrared Optical Investigations of Pb1-xEuxSe ∥ BaF2 Thin Films Grown by MBE by Maurice, T., Mahoukou, F., Breton, G., Charar, S., Masri, P., Averous, M., Bisaro, R.

“…IV–VI semiconductor compounds are interesting in the mid‐infrared (MIR) range for optoelectronic applications because these compounds have a narrow direct…”
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