Search Results - "ARSOVA, D"
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Transition of reversible photodarkening to photobleaching in chalcogenide films
Published in Europhysics letters (01-03-2010)“…Photodarkening (PD) of chalcogenide glasses and annealed films (i.e., photoinduced shift of the optical absorption edge to lower energies) is accompanied with…”
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2
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)“…The I–V characteristics obtained for layers of chalcogenide vitreous semiconductor of the Ge–Sb–Te system in the current-generator mode are investigated. The…”
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3
Interdependence of optical parameter changes in Ge–As–S films
Published in Physica. B, Condensed matter (15-09-2010)“…The presence or absence of correlation between irreversible and reversible photo- and thermoinduced changes of optical band gap ( E g ) and refractive index (…”
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4
Spectroscopic ellipsometry study of the effect of illumination and thermal annealing on the optical constants of thin Ge–As–S films
Published in Physica scripta (01-02-2011)Get full text
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5
Oxygen assisted photoinduced changes in Ge39Ga2S59 amorphous thin film
Published in Journal of non-crystalline solids (01-11-2010)“…Annealing of the Ge39Ga2S59 virgin amorphous thin film leads to the blue shift of the optical band gap owing to an increase of the film network order and to a…”
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6
Bond arrangement and optical band gap in GexAs40-xS(Se)60 glasses and thin films
Published in The Journal of physics and chemistry of solids (01-09-1996)Get full text
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7
Photo-expansion in Ge-As-S amorphous film monitored by digital holographic microscopy and atomic force microscopy
Published in Journal of Optoelectronics and Advanced Materials (01-04-2009)“…Using Digital Holographic Microscopy and Atomic Force Microscopy we unambiguously observed considerable photo-expansion at around 3.5% in virgin as well as in…”
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8
Photoinduced changes in sulphur rich Ge-As-S thin films
Published in Journal of Optoelectronics and Advanced Materials (01-09-2009)“…The irreversible and reversible photoinduced (PI) changes in thin films of Ge(11.2)As(18)S(70.8)glass (Z = 2.4) have been studied. Glasses with compositions…”
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9
Study of photo- and thermally-induced changes in Ge-As-S thin films by spectroscopic ellipsometry
Published in Journal of Optoelectronics and Advanced Materials (01-09-2009)“…The effect of illumination and post-illumination annealing on the optical properties and thicknesses of thin (~ 150 nm) films of Ge(30.8)As(5.7)S(63.5) and…”
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10
Composition and temperature dependence of the low-frequency Raman scattering in Ge–As–S glasses
Published in Journal of non-crystalline solids (01-11-2004)“…The Raman spectra of ‘stoichiometric’ (GeS2)x(As2S3)1−x glasses are presented for various compositions (x=0.40, 0.60, 0.80, 0.83, 0.90) and compared to that of…”
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11
Irreversible and reversible changes in band gap and volume of chalcogenide films
Published in Journal of non-crystalline solids (01-10-2003)“…Irreversible and reversible changes induced by illumination and/or annealing of thin evaporatively deposited Ge-As-S films at normal incidence are studied…”
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12
Low-temperature specific heat and thermal conductivity of ternary chalcogenide glasses
Published in Journal of Optoelectronics and Advanced Materials (01-07-2007)“…The main results from the investigated in the temperature range 3-300 K thermal properties, specific heat Cp and thermal conductivity k, of the GexAs40-xS60…”
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13
Photoinduced changes of the optical parameters of thin films from Ge30.8AS57S63.5 glass
Published in Journal of Optoelectronics and Advanced Materials (01-02-2007)“…Extremely high irreversible changes of the optical parameters have been found after long time illumination of thin films thermally evaporated from Gem eAS5…”
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14
PHOTOINDUCED CHANGES IN Ge-As-S THIN FILMS WITH VARIOUS NETWORK RIGIDITIES
Published in Journal of Optoelectronics and Advanced Materials (01-06-2005)“…Photo- and thermally induced changes in the optical bandgap and thickness are investigated in thin films that belong to three lines traced through regions with…”
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15
Low-temperature thermal conductivity of GexAs40-xS60 glasses
Published in Solid state communications (01-05-2005)Get full text
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16
STRUCTURE AND DYNAMICS OF Ge-As-S CHALCOGENIDE GLASSES MONITORED BY LOW-FREQUENCY RAMAN SCATTERING
Published in Journal of Optoelectronics and Advanced Materials (01-06-2005)“…The Raman scattering spectra of several 'stoichiometric' (GeS2)(As2S3)i-x glasses have been measured over temperatures ranging from 20 K, through the…”
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17
Low-temperature specific heat of Ge-As-S glasses
Published in Philosophical magazine letters (01-03-2005)“…The low-temperature specific heat C p of Ge x As 40− x S 60 glasses has been measured in the temperature range from 3 to 70 K. It has been established that the…”
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18
CHANGES IN THE ELECTRONIC STRUCTURE OF Ge-As-S THIN FILMS AFTER ILLUMINATION
Published in Journal of Optoelectronics and Advanced Materials (01-06-2005)“…The electronic structure of Ge-As-S glasses and films has been studied by means of X-ray photoelectron spectroscopy (XPS). Several compositions from two lines…”
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19
The boson peak in Raman spectra of AsxS1−x glasses
Published in Semiconductors (Woodbury, N.Y.) (01-01-2005)Get full text
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20
Photo- and thermo-induced bandgap and volume changes in Ge-based chalcogenide films
Published in Journal of materials science. Materials in electronics (01-10-2003)“…Irreversible and reversible changes induced by illumination and/or annealing of thin Ge-As-S films are studied. Attention is paid to the volume (thickness)…”
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