Search Results - "ARONOWITZ, S"

Science as Power: Discourse and Ideology in Modern Society by Aronowitz, Stanley

“…“Sets the stage for a new social theory of science. Aronowitz does not merely envision a new account of science; he argues for a critical, reflexive…”
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Atomic level modeling of boron diffusion through silicon oxide before and after plasma nitridation by Zubkov, V., Aronowitz, S., Sukharev, V.

“…Ab initio quantum chemical calculations on model systems containing one siloxane bond have been employed to get insight into the mechanisms of boron diffusion…”
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A methodology for deep sub-0.25 μm CMOS technology prediction by Palankovski, V, Belova, N, Grasser, T, Puchner, H, Aronowitz, S, Selberherr, S

“…We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing…”
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The use of clozapine in neurologic disorders by SAFFERMAN, A. Z, KANE, J. M, ARONOWITZ, J. S, GORDON, M. F, POLLACK, S, LIEBERMAN, J. A

“…The advent of clozapine has marked a major advance in the treatment of schizophrenia because of its low incidence of extrapyramidal side effects and superior…”
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Dextromethorphan abuse in a dually diagnosed patient by Iaboni, R P, Aronowitz, J S

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Management of clozapine-induced enuresis by Aronowitz, J S, Safferman, A Z, Lieberman, J A

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Modification of interfacial charge between SiO2 and silicon by ARONOWITZ, S, ANAND, K, RIGA, G

“…Reduction of the net positive charge at the interface between SiO2 and silicon has been achieved by implanting calcium in the SiO2 near the interface and…”
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Quantum-chemical modeling of smectite clays by Aronowitz, S, Coyne, L, Lawless, J, Rishpon, J

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Syncope associated with the combination of clozapine and enalapril by Aronowitz, J S, Chakos, M H, Safferman, A Z, Lieberman, J A

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Interfacial charge modification between SiO2 and silicon by ARONOWITZ, S, ZAPPE, H. P, HU, C

“…A positive flatband voltage shift, ΔVfb ≂+0.4 V, with respect to unimplanted portions of the same wafer, was obtained when calcium (1×1013 cm−2) was implanted…”
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Adiabatic approximation and the Jahn-Teller theorem by Aronowitz, S.

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Activation of group III combinations in silicon and modifications introduced by nitrogen by Aronowitz, S., Zubkov, V., Puchner, H., Kimball, J.

“…A series of experiments were initiated after finding that a supersteep retrograde channel of an n-channel silicon-based field effect transistor would not have…”
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Simulation of ultra-low energy ion implantation from a remote plasma source using Monte Carlo techniques by Puchner, H., Sukharev, V., Aronowitz, S.

“…We present simulation as well as experimental data for ultra-low energy nitrogen ion implants from a remote nitrogen plasma source. Nitrogen plasma ion…”
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Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices by Aronowitz, S., Puchner, H., Zubcov, V.

“…Activation/deactivation behavior of combinations of electrically active dopants boron and indium with nitrogen was studied both experimentally and quantum…”
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Best/worst case extraction and yield cost estimation using Monte Carlo statistical analysis by Belova, N., Aronowitz, S., Dong, J., Puchner, H.

“…Methodology and simulation results from Monte Carlo sensitivity analysis based on discretization of the second-order Taylor expansion for electrical device…”
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Statistical simulation, calibration and analysis of 0.25 CMOS technology by Dong, J., Belova, N., Aronowitz, S.

“…A statistical simulation flow for the characterization and analysis of 0.25 CMOS technology is presented. The simulation tools PDFAB, Tsuprem4 and Medici were…”
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The Gaussian Chain with Volume Exclusion by Aronowitz, S, Eichinger, B. E

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Hot hydrogen atom reactions moderated by molecular hydrogen and helium by Aronowitz, S, Scattergood, T, Flores, J, Chang, S

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Hot hydrogen atom reactions moderated by H2 and He by Aronowitz, S., Scattergood, T., Flores, J., Chang, S.

“…Photolysis experiments were performed on the H2-CD4-NH3 and He-CD4-NH3 systems. The photolysis (1849 A) involved only NH3. Mixtures of H2:CD4:NH3 included all…”
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Gate leakage current simulation for nanoscale NMOSFETs with nitrided gate dielectric by Boltzmann transport equation by Mitra, S., Goldsman, N., Han, Z., Mirabedini, M., Aronowitz, S., Belova, N.

“…We present an efficient but rigorous method to calculate gate leakage current for nanoscale devices, with and without nitrided gate dielectric. We achieve this…”
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