Search Results - "ANEMIYA, K"

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    Low resistance Al/Si ohmic contacts on boron implanted shallow p+ Si layers formed by halogen lamp annealing by HARA, T, OHTSUKA, N, ENOMOTO, S, HIRAYAMA, T, ANEMIYA, K, FURUKAWA, M

    Published in Japanese Journal of Applied Physics (01-11-1983)
    “…Contact resistance of Al/Si Ohmic electrodes formed on boron implanted shallow p + layers has been measured, where the annealing of ion implanted layers was…”
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    Journal Article