Search Results - "ALZANKI, T"
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Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon
Published in Applied physics letters (13-09-2004)“…A differential Hall effect technique has been developed to obtain doping profiles at a depth resolution down to 2nm with junction depths of about 20nm. We have…”
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Journal Article -
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Low-temperature processing of antimony-implanted silicon
Published in Journal of electronic materials (01-07-2004)“…It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square)…”
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Journal Article -
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Electrical profiles of 20nm junctions in Sb implanted silicon
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-01-2006)“…Differential Hall effect and resistivity measurements have been carried out to obtain electron concentration and mobility profiles of both single implants…”
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Journal Article -
4
Shallow junctions in silicon via low thermal budget processing
Published in 2006 International Workshop on Junction Technology (2006)“…The paper summarises recent findings concerning the fabrication of ultra-shallow junctions in silicon for future generations of CMOS devices. In particular we…”
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