Memory effect in ferroelectric-semiconductor with incommensurate phase TlGase2

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Bibliographic Details
Published in:	Solid state communications Vol. 128; no. 1; pp. 25 - 28
Main Authors:	ALIYEV, V. P, BABAYEV, S. S, MAMMADOV, T. G, YU SEYIDOV, Mir-Hasan, SULEYMANOV, R. A
Format:	Journal Article
Language:	English
Published:	Oxford Elsevier 01-10-2003
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Ferroelectricity and antiferroelectricity Incommensaturate crystals Incommensurate crystals Phase transitions and curie point Physics Semi-periodic solids Structure of solids and liquids; crystallography Temperature dependence Annealing Inorganic compounds Incommensurate phases Phase transformations Ternary compounds 77.80 D. Phase transition D. Incommensurate Experimental study III-VI semiconductors 61.44.F A. Ferroelectrics Monocrystals Thallium selenides Ferroelectric materials Permittivity Memory effect Gallium selenides
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ISSN:	0038-1098 1879-2766
DOI:	10.1016/S0038-1098(03)00619-7