Search Results - "ALABEDRA, R"
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Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach
Published in IEEE journal of quantum electronics (01-04-2005)“…Linewidth determination by self-heterodyne or self-homodyne methods may lead to mistaken interpretation, because these measurements often include significant…”
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Journal Article -
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Low-frequency noise measurements as an investigation tool of pixel flickering in cooled Hg/sub 0.7/Cd/sub 0.3/Te focal plane arrays
Published in IEEE transactions on electron devices (01-05-2005)“…We report on electrical noise measurements on both Hg/sub 0.7/Cd/sub 0.3/Te test patterns and hybrid 320 /spl times/ 256 focal plane array in order to explain…”
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Journal Article -
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Correlation between electrical and optical photocurrent noises in semiconductor laser diodes
Published in IEEE transactions on electron devices (01-11-1994)“…The low and medium frequency (1 Hz/spl les/f/spl les/10 MHz) electrical noise characteristics of 0.98, 1.3, and 1.55 micrometer semiconductor lasers have been…”
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Journal Article -
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An Hg0.3Cd0.7Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm
Published in IEEE transactions on electron devices (01-07-1985)“…The purpose of this paper is the characterization of Hg 0.3 Cd 0.7 Te avalanche photodiodes at γ = 1.3 µm. These devices are manufactured by tile Société…”
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Journal Article -
5
Impact ionization resonance and auger recombination in Hg1 - xCdxTe (0.6 ≤ x ≤ 0.7)
Published in IEEE journal of quantum electronics (01-07-1987)“…The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg 1-x Cd x Te avalanche photodiodes, with 0.6 \leq x \leq 0.7 …”
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Journal Article -
6
Gate current 1/f noise in GaAs MESFET's
Published in IEEE transactions on electron devices (01-07-1988)“…Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a…”
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Low-frequency noise measurements as an investigation tool of pixel flickering in cooled Hg sub(0.7)Cd sub(0.3)Te focal plane arrays
Published in IEEE transactions on electron devices (01-01-2005)“…We report on electrical noise measurements on both Hg sub(0.7)Cd sub(0.3)Te test patterns and hybrid 320 256 focal plane array in order to explain the…”
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Journal Article -
9
Determination of Multiplication Factor M for Optimum Behaviour of Avalanche
Published in Engineering and Technology Journal (02-04-1983)“…The purpose of this paper is the determination of multiplication factor M for optimum behaviour of avalanche photodetectors. We compare two types of avalanche…”
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10
Multiple access optical devices in organic-mineral material
Published in COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (2000)“…The optical fiber, which offers a large bandwidth (about five TeraHertz per telecommunication window), can be fully used only if the techniques of multiple…”
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Conference Proceeding -
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Low-frequency noise measurements as an investigation tool of pixel flickering in cooled Hg0.7Cd0.3Te focal plane arrays
Published in IEEE transactions on electron devices (01-05-2005)Get full text
Journal Article -
12
Rapport des coefficients d'ionisation et de bruit dans les photodétecteurs à avalanche Hg0,44 Cd0,56 Te à λ=1,6 μm
Published in Annales des télécommunications (01-03-1988)Get full text
Journal Article -
13
Impact ionization resonance and auger recombination in Hg(1 -x)Cd(x)Te (0.6 < = x < = 0.7)
Published in IEEE journal of quantum electronics (01-07-1987)“…The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg(1-x)Cd(x)Te avalanche photodiodes, with0.6 leq x leq 0.7…”
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Journal Article -
14
Hg/sub 0.56/ Cd/sub 0.44/ Te 1.6- to 2.5- mu m avalanche photodiode and noise study far from resonant impact ionization
Published in IEEE transactions on electron devices (01-08-1991)“…An investigation was made on the avalanche multiplication and impact ionization processes in p-n/sup -/-n/sup +/ junctions formed in Hg/sub 0.56/Cd/sub 0.44/Te…”
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Journal Article -
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Hg(0.56) Cd(0.44) Te 1.6-to 2.5-mu m avalanchephotodiode and noise study far from resonant impact ionization
Published in IEEE transactions on electron devices (01-08-1991)“…An investigation was made on the avalanche multiplication and impact ionization processes in p-n(-)-n( ) junctions formed in Hg(0.56)Cd(0.44)Te solid…”
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Journal Article -
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Hg sub(0.56)Cd sub(0.44)Te 1.6- to 2.5- mu m avalanche photodiode and noise study far from resonant impact ionization
Published in IEEE transactions on electron devices (01-01-1991)“…An investigation was made on the avalanche multiplication and impact ionization processes in p-n super(-)-n super(+) junctions formed in Hg sub(0.56)Cd…”
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Journal Article -
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Hg0.56Cd0.44Te 1.6- to 2.5-μm avalanche photodiode and noise study far from resonant impact ionization
Published in IEEE transactions on electron devices (1991)Get full text
Journal Article -
18
Impact ionization resonance and auger recombination in Hg 1 - x Cd x Te ( 0.6 ≤ x ≤ 0.7 )
Published in IEEE journal of quantum electronics (01-07-1987)Get full text
Journal Article -
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Impact ionization resonance and Auger recombination in Hg sub(1-x)Cd sub(x)Te (0.6 less than or equal to x less than or equal to 0.7)
Published in IEEE journal of quantum electronics (01-01-1987)“…The purpose of this paper is the study of the impact ionization and the Auger recombination in Hg sub(1-xCd)dxTe avalanche photodiodes, with 0.6 less than or…”
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Journal Article -
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Low frequency Noise Measurements as an investigation tool of pixel flickering in cooled Hg0,7Cd0,3Te focal plane arrays
Published in IEEE transactions on electron devices (2005)“…We report on electrical noise measurements on both Hg0.7Cd0.3Te test patterns and hybrid 320 x 256 focal plane array in order to explain the low-frequency…”
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Journal Article