Search Results - "AJIOKA, T"

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  1. 1

    Water pH and temperature in Lake Biwa from MBT'/CBT indices during the last 280 000 years by Ajioka, T, Yamamoto, M, Takemura, K, Hayashida, A, Kitagawa, H

    Published in Climate of the past (17-10-2014)
    “…We generated a 280 000 yr record of water pH and temperature in Lake Biwa, central Japan, by analysing the methylation index (MBT′) and cyclisation ratio (CBT)…”
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    Journal Article
  2. 2

    An application of cathodoluminescence to optimize the shallow trench isolation process by Mizukoshi, T., Shibusawa, K., Yo, S., Sugie, R., Ajioka, T.

    “…Cathodoluminescence (CL) spectroscopy was applied to optimize the shallow trench isolation (STI) process. The analysis of dislocations with CL spectroscopy…”
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    Journal Article
  3. 3

    Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si(100) surfaces by HIRASHITA, N, KINOSHITA, M, AIKAWA, I, AJIOKA, T

    Published in Applied physics letters (29-01-1990)
    “…Thermally stimulated desorption and x-ray photoelectron spectroscopy were used to study the air oxidation at room temperature of HF-treated Si(100) surfaces…”
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    Journal Article
  4. 4

    Construction of a cost-effective failure analysis service network––microelectronic failure analysis service in Japan by Nakajima, S, Nakamura, S, Kuji, K, Ueki, T, Ajioka, T, Sakai, T

    Published in Microelectronics and reliability (01-04-2002)
    “…A failure analysis network has been constructed for providing cost-effective failure analysis service. In Japan, physical/chemical analysis service has been…”
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    Journal Article
  5. 5

    The effect of oxide charges at LOCOS isolation edges on oxide breakdown by Uchida, H., Hirashita, N., Ajioka, T.

    Published in IEEE transactions on electron devices (01-10-1993)
    “…The degradation of time dependent dielectric breakdown (TDDB) characteristics at LOCOS isolation edges has been studied using MOS capacitors with and without…”
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    Journal Article
  6. 6

    The degradation of TDDB characteristics of Si0/sub 2//Si/sub 3/N/sub 4//Si0/sub 2/ stacked films caused by surface roughness of Si/sub 3/N/sub 4/ films (DRAMs) by Tanaka, H., Uchida, H., Ajioka, T., Hirashita, N.

    Published in IEEE transactions on electron devices (01-12-1993)
    “…The effect of surface roughness of Si/sub 3/N/sub 4/ films on time-dependent dielectric breakdown (TDDB) characteristics of SiO/sub 2//Si/sub 3/N/sub…”
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    Journal Article
  7. 7

    Chemical analysis of metallic contamination on a wafer after wet cleaning by Mizokami, Y., Ajioka, T., Terada, N.

    “…The chemical analysis of trace metallic contamination on a wafer can be achieved by using total reflection X-ray fluorescence (TRXRF) with HF condensation and…”
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    Journal Article
  8. 8

    A method of eliminating B-mode dielectric breakdown failure in gate oxides utilizing a charging phenomenon by Ajioka, T., Nara, A., Tominaga, Y., Ushikoshi, T., Kitabayashi, H.

    Published in IEEE transactions on electron devices (01-12-1993)
    “…An investigation of the dielectric breakdown characteristics of charged samples is discussed. B-mode dielectric breakdown failure was eliminated by scrubbing…”
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    Journal Article
  9. 9

    Prediction of dark currents in actual devices using new test structure by Shibusawa, K., Murakami, N., Mori, T., Ajioka, T.

    “…A test structure with four gate-controlled diodes (GCDs) and two junction diodes (with different dimensions) is designed in order to divide a dark current in…”
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    Conference Proceeding
  10. 10
  11. 11

    Issues Of Wet Cleaning In ULSI Process by Ajioka, T., Mizokami, Y.

    “…Wet cleaning for actual LSI processes is discussed. Particle elimination efficiency is limited by suppression of device degradation and cleaning is invalid for…”
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    Conference Proceeding
  12. 12

    Electron trap center generation due to hole trapping in SiO sub(2) under Flowler-Nordheim tunneling stress by Uchida, H, Ajioka, T

    Published in Applied physics letters (01-01-1987)
    “…The relation between generation of neutral electron trapping in thermally grown SiO sub(2) under Fowler-Nordheim tunneling stress has been investigated. The…”
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    Journal Article
  13. 13

    Characterization of the implantation damage in SiO sub(2) with x-ray photoelectron spectroscopy by Ajioka, T, Ushio, S

    Published in Applied physics letters (01-01-1986)
    “…X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO sub(2) by ion implantation. By measuring the peak width…”
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    Journal Article
  14. 14

    The degradation of TDDB characteristics of SiO(2)/Si(3)N(4)/SiO(2) stacked films caused by surfaceroughness of Si(3)N(4) films DRAMs by Tanaka, H, Uchida, H, Ajioka, T, Hirashita, N

    Published in IEEE transactions on electron devices (01-12-1993)
    “…The effect of surface roughness of Si(3)N(4) films on time-dependent dielectric breakdown (TDDB) characteristics of SiO(2)/Si(3)N(4)/SiO(2) (ONO) stacked films…”
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    Journal Article
  15. 15

    Electron trap center generation due to hole trapping in SiO2 under Fowler-Nordheim tunneling stress by UCHIDA, H, AJIOKA, T

    Published in Applied physics letters (10-08-1987)
    “…The relation between generation of neutral electron trap centers and hole trapping in thermally grown SiO2 under Fowler–Nordheim tunneling stress has been…”
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    Journal Article
  16. 16

    Characterization of the implantation damage in SiO2 with x-ray photoelectron spectroscopy by AJIOKA, T, USHIO, S

    Published in Applied physics letters (19-05-1986)
    “…X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO2 by ion implantation. By measuring the peak width of…”
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    Journal Article
  17. 17

    Critical current densities and magnetic hysteresis losses in submicron filament bronze-processed Nb/sub 3/Sn wires by Kamata, K., Sakai, S., Tachikawa, K., Taniguchi, T., Ajioka, T., Hatakeyama, H.

    Published in IEEE transactions on magnetics (01-03-1991)
    “…Submicron-filament bronze-processed multifilamentary Nb/sub 3/Sn wires with a Cu-5at.%Sn matrix and Nb or Nb alloy cores have been fabricated. The Nb alloy…”
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    Journal Article
  18. 18

    Critical current densities and magnetic hysteresis losses in submicron filament bronze-processed Nb(3)Sn wires by Kamata, K, Sakai, S, Tachikawa, K, Taniguchi, T, Ajioka, T, Hatakeyama, H

    Published in IEEE transactions on magnetics (01-03-1991)
    “…Submicron-filament bronze-processed multifilamentary Nb(3)Sn wires with a Cu-5at.%Sn matrix and Nb or Nb alloy cores have been fabricated. The Nb alloy cores…”
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    Journal Article
  19. 19

    Critical current densities and magnetic hysteresis losses in submicron filament bronze-processed Sb,Sn wires by Kamata, K., Sakai, S., Tachikawa, K., Taniquchi, T., Ajioka, T., Hatakeyama, H.

    “…This paper reports on submicron filament bronze-processed multifilamentary Nb{sub 3}Sn wires with Cu-5at%Sn matrix and Nb or Nb alloy cores. The Nb alloy cores…”
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    Conference Proceeding
  20. 20