Search Results - "AHRENKIEL, R. K"

Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials by Ahrenkiel, R.K., Call, N., Johnston, S.W., Metzger, W.K.

“…Rapid and contactless measurement of the recombination lifetime has become a very important issue in photovoltaics. The recombination lifetime is probably the…”
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An optical technique for measuring surface recombination velocity by Ahrenkiel, R.K., Johnston, S.W.

“…The surface recombination velocity is a critical parameter in silicon device applications including solar cells. In this work, we developed and applied a…”
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Lifetime analysis of silicon solar cells by microwave reflection by Ahrenkiel, R.K., Johnston, S.W.

“…Microwave photoconductive decay ( μPCD) has become a standard technique for measuring the carrier lifetime of silicon used in solar cells. Here, we have used…”
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Recombination lifetime of In0.53Ga0.47As as a function of doping density by Ahrenkiel, R. K., Ellingson, R., Johnston, S., Wanlass, M.

“…We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019 cm−3. These isotype double…”
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Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP by AHRENKIEL, S. P, WANLASS, M. W, CARAPELLA, J. J, AHRENKIEL, R. K, JOHNSTON, S. W, GEDVILAS, L. M

“…We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The…”
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Microsecond minority carrier lifetimes in HWCVD-grown films and implications for thin film solar cells by Mason, M.S., Richardson, C.E., Atwater, H.A., Ahrenkiel, R.K.

“…We determine the minority carrier lifetimes of nearly intrinsic Si films 1.5–15 μm thick grown by HWCVD at 300 °C on Si (100) and large-grained polycrystalline…”
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An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors by Ahrenkiel, R.K., Johnston, S.W.

“…Rapid and contactless defect characterization is a very desirable goal in most current technologies. We will describe the contactless, resonant-coupled…”
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Recombination processes and lifetime measurements in silicon photovoltaics by Ahrenkiel, R.K

“…Recombination lifetime is one of the critical parameters in the search for cost-competitive photovoltaic technologies. Each technology has specific materials…”
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Explanation of red spectral shifts at CdTe grain boundaries by Moseley, J., Al-Jassim, M. M., Moutinho, H. R., Guthrey, H. L., Metzger, W. K., Ahrenkiel, R. K.

“…We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation…”
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Auger recombination in low-band-gap n -type InGaAs by Metzger, W. K., Wanlass, M. W., Ellingson, R. J., Ahrenkiel, R. K., Carapella, J. J.

“…We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x=0.53, 0.66, and 0.78 (band gaps of…”
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Characterization survey of GaxIn1-xAs/InAsyP1-y double heterostructures and InAsyP1-y multilayers grown on InP by AHRENKIEL, S. P, WANLASS, M. W, CARAPELLA, J. J, GEDVILAS, L. M, KEYES, B. M, AHRENKIEL, R. K, MOUTINHO, H. R

“…Low-bandgap, lattice-mismatched GaxIn1-xAs (GaInAs) grown using InAsyP1-y (InAsP) compositional-step grades on InP is a primary choice for light-absorbing,…”
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Analysis of charge separation dynamics in a semiconductor junction by METZGER, W. K, AHRENKIEL, R. K, DASHDORJ, J, FRIEDMAN, D. J

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Contactless measurement of recombination lifetime in photovoltaic materials by Ahrenkiel, R.K., Johnston, Steven

“…Contactless measurement of important semiconductor parameters has become the goal of current semiconductor diagnostics. Here we will describe an improved…”
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Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces by Olson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E.

“…Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by…”
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Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition by Ahrenkiel, R. K., Johnston, S. W., Keyes, B. M., Friedman, D. J., Vernon, S. M.

“…A series of devices with the structure GaAs/GaAs1−xNx/GaAs and 0.01<x<0.03 have been grown by metalorganic chemical vapor deposition. The transient…”
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Auger recombination in heavily carbon-doped GaAs by Ahrenkiel, R. K., Ellingson, R., Metzger, W., Lubyshev, D. I., Liu, W. K.

“…The recombination parameters in heavily carbon-doped GaAs are of considerable importance to current bipolar transistor technology. Here, we used time-resolved…”
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Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling by AHRENKIEL, R. K, DUNLAVY, D. J, KEYES, B, VERNON, S. M, DIXON, T. M, TOBIN, S. P, MILLER, K. L, HAYES, R. E

“…The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition…”
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Approach toward high efficiency CdTe/CdS heterojunction solar cells by Chou, H.C., Rohatgi, A., Jokerst, N.M., Kamra, S., Stock, S.R., Lowrie, S.L., Ahrenkiel, R.K., Levi, D.H.

“…CdTe solar cells were fabricated by depositing MOCVD grown CdTe films on CdS/SnO 2/glass substrates with varying Te:Cd mole ratios in the growth ambient. Cells…”
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Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films by LUSH, G. B, MELLOCH, M. R, LUNDSTROM, M. S, LEVI, D. H, AHRENKIEL, R. K, MACMILLAN, H. F

“…We have observed lifetimes greater than 1 μs in moderately doped, thin film, n-GaAs/Al0.3Ga0.7As double heterostructure membranes formed by etching away the…”
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Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers by Ahrenkiel, R.K., Johnston, S.W., Metzger, W.K., Dippo, P.

“…In recent years, intrinsic luminescence has been used as a method to characterize the recombination lifetime of crystalline silicon. The assumption is that the…”
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