Search Results - "AHARONI, H"

Factors associated with dynamic balance in people with Persistent Postural Perceptual Dizziness (PPPD): a cross-sectional study using a virtual-reality Four Square Step Test by Aharoni, Moshe M H, Lubetzky, Anat V, Arie, Liraz, Krasovsky, Tal

“…Persistent postural-perceptual dizziness (PPPD) is a condition characterized by chronic subjective dizziness and exacerbated by visual stimuli or upright…”
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Postural Control under Cognitive Load: Evidence of Increased Automaticity Revealed by Center-of-Pressure and Head Kinematics by Lubetzky, Anat V., Coker, Elizabeth, Arie, Liraz, Aharoni, Moshe M. H., Krasovsky, Tal

“…How postural responses change with sensory perturbations while also performing a cognitive task is still debatable. This study investigated this question via…”
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Anomalous photovoltaic effect in nanocrystalline Si∕SiO2 composites by Levi Aharoni, H., Azulay, D., Millo, O., Balberg, I.

“…We have observed an anomalous photovoltaic effect in films of Si nanocrystals embedded in SiO2. Using conductive-probe atomic force microscopy and global…”
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Low-operating-voltage integrated silicon light-emitting devices by Aharoni, H., du Plessis, M.

“…A solution is presented for the fabrication of low-voltage, low-power (<4.25 V and <5 mW) silicon light-emitting devices (Si-LEDs), utilizing standard very…”
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An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface by Snyman, L.W., du Plessis, M., Seevinck, E., Aharoni, H.

“…A silicon light emitting device was designed and realized utilizing a standard 2-μm industrial CMOS technology design and processing procedure. The device and…”
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Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems by du Plessis, M., Aharoni, H., Snyman, L.W.

“…It is shown that, by using conventional VLSI design rules and device processing, a variety of two terminal and multiterminal integrated silicon light-emitting…”
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Thin inter-polyoxide films for flash memories grown at low temperature (400/spl deg/C) by oxygen radicals by Hamada, T., Saito, Y., Hirayama, M., Aharoni, H., Ohmi, T.

“…Thin polyoxide films grown at 400/spl deg/C on n/sup +/-poly-Si films, used as gate insulators in MOS capacitors, are shown to exhibit superior performance,…”
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Spatial and intensity modulation of light emission from a silicon LED matrix by du Plessis, M., Aharoni, H., Snyman, L.W.

“…A novel experimental multiterminal silicon light emitting diode matrix is described, where both the emitted light intensity and the spatial light pattern of…”
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Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO/sub 2/ interface treatments by Ohkawa, T., Nakamura, O., Sugawa, S., Aharoni, H., Ohmi, T.

“…A new two-step processing combination, for MOS devices improvement, is presented. It is composed of a pregate oxidation of (100) Si surface atomic scale…”
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An alternative approach for the determination of the "OFF-ON" turnover process in four-layer semiconductor devices by Aharoni, H., Likhterov, B.

“…A tutorial point of view is presented regarding a classroom description of the triggering action leading to the "OFF-ON" switching of four-layer semiconductor…”
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X‐ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition by Nelson, A. J., Aharoni, H.

“…X‐ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O2 partial pressure during…”
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Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma by Saito, Y., Takahashi, H., Ohtsubo, K.O., Hirayama, M., Sugawa, S., Aharoni, H., Ohmi, T.

“…MOSFET subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar-H/sub 2/ plasma. This mixture was…”
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Anomalous photovoltaic effect in nanocrystalline Si ∕ Si O 2 composites by Levi Aharoni, H., Azulay, D., Millo, O., Balberg, I.

“…We have observed an anomalous photovoltaic effect in films of Si nanocrystals embedded in Si O 2 . Using conductive-probe atomic force microscopy and global…”
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A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density by Snyman, L.W, Aharoni, H, Monuko du Plessis, Monuko du Plessis

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In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantation by Swart, P.L., Lacquet, B.M., Aharoni, H.

“…In situ reflectometry during ion implantation of /sup 31/P/sup +/ onto single crystal Si substrates at implantation energies between 50 and 240 keV, and using…”
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A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density by Snyman, L.W., Aharoni, H., Monuko du Plessis

“…A dependency of quantum efficiency of nn/sup +/pp/sup +/ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current…”
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Some practical remarks on the in situ calibration of the sensitivity factor S of a quadrupole mass spectrometer for hydrogen and argon during rf sputtering for the growth of thin a-Si:H layers by SWART, P. L, AHARONI, H

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In situ computerized optical reflectivity measurement system for ion implantation by Swart, P.L., Lacquet, B.M., Grobler, M.F., Aharoni, H.

“…A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the…”
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Quantum efficiency of CMOS integrated silicon n+pp+ light-emitting devices as a function of current density by Snyman, L.W., Aharoni, H., du Plessis, M.

“…A remarkable increase in the quantum efficiency and light emission intensity has been observed as a function of the current density for n/sup +/pp/sup +/…”
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Silicon light emitting devices in standard CMOS technology by du Plessis, M., Aharoni, H., Snyman, L.W.

“…Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be…”
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