Search Results - "AGAIBY, Rimoon"

Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation by Kupke, Steve, Knebel, Steve, Ocker, Johannes, Slesazeck, Stefan, Agaiby, Rimoon, Trentzsch, Martin, Mikolajick, Thomas

“…Continuous CMOS logic switching results in a consecutive series of gate bias temperature instability and drain (OFF-state) stress. We also show that the…”
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Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability by Knebel, S., Kupke, S., Schroeder, U., Slesazeck, S., Mikolajick, T., Agaiby, R., Trentzsch, M.

“…Time-dependent dielectric breakdown and stress-induced leakage current (SILC) behavior of a 28-nm hafnium-based high-k/metal gate n-type MOS transistors are…”
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The Degradation Process of High- k~/ Gate-Stacks: A Combined Experimental and First Principles Investigation by Nadimi, Ebrahim, Roll, Guntrade, Kupke, Steve, Öttking, Rolf, Plänitz, Philipp, Radehaus, Christian, Schreiber, Michael, Agaiby, Rimoon, Trentzsch, Martin, Knebel, Steve, Slesazeck, Stefan, Mikolajick, Thomas

“…Theoretical and experimental methods are applied to investigate the degradation of SiO 2 /HfO 2 gate-stacks in state-of-the-art MOSFETs. A combination of…”
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First Insight Into the Lifetime Acceleration Model of High-k ZrO2/SiO2/ZrO2 Stacks for Advanced DRAM Technology Nodes by AGAIBY, Rimoon, HOFMANN, Peter, DAYU ZHOU, KERBER, Martin, HEITMANN, Johannes, SCHROEDER, Uwe, ERBEN, Eike, OBERBECK, Lars

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Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs by Dalapati, G.K., Chattopadhyay, S., Kwa, K.S.K., Olsen, S.H., Tsang, Y.L., Agaiby, R., O'Neill, A.G., Dobrosz, P., Bull, S.J.

“…Surface channel strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrates (VSs) have been established as an attractive avenue for extending…”
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Quantifying self-heating effects with scaling in globally strained Si MOSFETs by Agaiby, Rimoon, Yang, Yang, Olsen, Sarah H., O’Neill, Anthony G., Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor

“…Electrical results are presented for deep submicron strained Si MOSFETs fabricated on both thick and thin SiGe strain relaxed buffers, SRBs. For the first time…”
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Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating by Agaiby, Rimoon, O'Neill, Anthony G., Olsen, Sarah H., Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor

“…This brief compares the quality of ultrathin SiON dielectrics of nMOSFETs grown on strained-Si layers with both thin and thick SiGe strain-relaxed buffers…”
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Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs by Olsen, S.H., Escobedo-Cousin, E., Varzgar, J.B., Agaiby, R., Seger, J., Dobrosz, P., Chattopadhyay, S., Bull, S.J., O'Neill, A.G., Hellstrom, P.-E., Edholm, J., Ostling, M., Lyutovich, K.L., Oehme, M., Kasper, E.

“…This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in…”
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Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling by Agaiby, R., O'Neill, A., Olsen, S., Eneman, G., Verheyen, P., Loo, R., Claeys, C.

“…This paper presents the first demonstration and quantification of the reduced self-heating effects in deep submicron n-MOSFETs on thin strain relaxed buffers…”
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Reliability Comparison of ZrO 2 -Based DRAM High-k Dielectrics Under DC and AC Stress by Knebel, Steve, Zhou, Dayu, Schroeder, Uwe, Slesazeck, Stefan, Pesic, Milan, Agaiby, Rimoon, Heitmann, Johannes, Mikolajick, Thomas

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Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress by Knebel, Steve, Dayu Zhou, Schroeder, Uwe, Slesazeck, Stefan, Pesic, Milan, Agaiby, Rimoon, Heitmann, Johannes, Mikolajick, Thomas

“…In this paper, the time dependent dielectric breakdown behavior is investigated for production type crystalline ZrO 2 -based thin films under dc and ac stress…”
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