Search Results - "ACCARD, A"

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  1. 1

    146-GHz millimeter-wave radio-over-fiber photonic wireless transmission system by Fice, M J, Rouvalis, E, van Dijk, F, Accard, A, Lelarge, F, Renaud, C C, Carpintero, G, Seeds, A J

    Published in Optics express (16-01-2012)
    “…We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two…”
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    Journal Article
  2. 2

    Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core by Lelarge, F., Rousseau, B., Dagens, B., Poingt, F., Pommereau, F., Accard, A.

    Published in IEEE photonics technology letters (01-07-2005)
    “…Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 μm were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature…”
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    Journal Article
  3. 3

    Direct Modulation of Hybrid-Integrated InP/Si Transmitters for Short and Long Reach Access Network by de Valicourt, Guilhem, Levaufre, Guillaume, Pointurier, Yvan, Le Liepvre, A., Antona, J.-C, Jany, C., Accard, A., Lelarge, Francois, Make, D., Guang-Hua Duan

    Published in Journal of lightwave technology (15-04-2015)
    “…Recent progresses on hybrid InP/Si integration are presented for achieving high-performance tunable transmitters for cost-sensitive wavelength division…”
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    Journal Article
  4. 4

    Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU by de Valicourt, G, Le Liepvre, A, Vacondio, F, Simonneau, C, Lamponi, M, Jany, C, Accard, A, Lelarge, F, Make, D, Poingt, F, Duan, G H, Fedeli, J-M, Messaoudene, S, Bordel, D, Lorcy, L, Antona, J-C, Bigo, S

    Published in Optics express (10-12-2012)
    “…We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip…”
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    Journal Article
  5. 5

    A Next-Generation Optical Packet-Switching Node Based on Hybrid III-V/Silicon Optical Gates by de Valicourt, Guilhem, Moroz, N. D., Jenneve, P., Vacondio, F., Duan, G. H., Jany, C., Leliepvre, A., Accard, A., Antona, J. C.

    Published in IEEE photonics technology letters (01-04-2014)
    “…We report a hybrid silicon optical gate array based on a silicon waveguide with a III-V gain medium and two vertical grating couplers. The gates show a fast…”
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    Journal Article
  6. 6

    Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m by Azouigui, S., Dagens, B., Lelarge, F., Provost, J.-G., Make, D., Le Gouezigou, O., Accard, A., Martinez, A., Merghem, K., Grillot, F., Dehaese, O., Piron, R., Loualiche, S., Qin Zou, Ramdane, A.

    “…This paper reports on the tolerance of low-dimensional InAs/InP quantum-dash- and quantum-dot-based semiconductor lasers to optical feedback in the 1.55 mum…”
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    Journal Article
  7. 7

    Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers by Heck, S.C., Osborne, S., Healy, S.B., O'Reilly, E.P., Lelarge, F., Poingt, F., Le Gouezigou, O., Accard, A.

    Published in IEEE journal of quantum electronics (01-12-2009)
    “…We present a combined theoretical and experimental analysis of InAs/InGaAsP/InP quantum dash lasers. Calculations using an 8 band k.p Hamiltonian show that…”
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    Journal Article
  8. 8

    Tolerance to Optical Feedback of 10-Gb/s Quantum-Dash-Based Lasers Emitting at 1.51 $\mu$m by Azouigui, S., Dagens, B., Lelarge, F., Provost, J. G., Accard, A., Grillot, F., Martinez, A., Zou, Q., Ramdane, A.

    Published in IEEE photonics technology letters (01-08-2007)
    “…Tolerance to optical feedback is investigated on quantum-dash-based lasers emitting at 1.51 mum. The onset of coherence collapse regime is experimentally…”
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    Journal Article
  9. 9

    Nonlinear Effects Analysis in DBR Lasers: Applications to DBR-SOA and New Double Bragg DBR by Debregeas-Sillard, H., Fortin, S., Accard, A., Drisse, O., Derouin, E., Pommereau, F., Kazmierski, C.

    “…This paper presents a theoretical and experimental study of nonlinear effects in distributed Bragg reflector (DBR)-type tunable lasers, which are responsible…”
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    Journal Article
  10. 10

    Chirp optimization of 1550nm InAs/InP Quantum Dash based directly modulated lasers for 10Gb/s SMF transmission up to 65Km by Lelarge, F, Chimot, N, Rousseau, B, Martin, F, Brenot, R, Accard, A

    “…Static and dynamic properties of InP-based Quantum Dashes of 1.55μm directly modulated lasers are reported. Using growth and design optimization, we…”
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    Conference Proceeding
  11. 11

    Widely Vernier tunable external cavity laser including a sampled fiber Bragg grating with digital wavelength selection by Bergonzo, A., Jacquet, J., De Gaudemaris, D., Landreau, J., Plais, A., Vuong, A., Sillard, H., Fillion, T., Durand, O., Krol, H., Accard, A., Riant, I.

    Published in IEEE photonics technology letters (01-08-2003)
    “…We demonstrate an easy and efficient step tunable sampled fiber Bragg grating (SFBG) external cavity laser. A small current variation applied to a single…”
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    Journal Article
  12. 12

    Timing jitter from the optical spectrum in semiconductor passively mode locked lasers by Rosales, Ricardo, Merghem, Kamel, Martinez, Anthony, Lelarge, Francois, Accard, Alain, Ramdane, Abderrahim

    Published in Optics express (09-04-2012)
    “…An analysis of the passively mode locked regime in semiconductor lasers is presented, leading to an explicit expression relating the timing jitter diffusion…”
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    Journal Article
  13. 13

    InAs/InP Quantum-Dot Passively Mode-Locked Lasers for 1.55-μ m Applications by Rosales, R., Merghem, K., Martinez, A., Akrout, A., Tourrenc, J.-P, Accard, A., Lelarge, F., Ramdane, A.

    “…This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive…”
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    Journal Article
  14. 14

    Room temperature CW operation of InAs/InP (100) quantum dots based buried ridge stripe lasers by Lelarge, F., Rousseau, B., Poingt, F., Pommereau, F., Accard, A.

    “…Fabrication of InAs QDs grown on (100) InP substrate by GSMBE is reported. We investigate the room temperature operation of QDs-based broad area and buried…”
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    Conference Proceeding
  15. 15

    Chromatic Dispersion in 60 GHz Radio-Over-Fiber Networks Based on Mode-Locked Lasers by Brendel, F., Poette, J., Cabon, B., Zwick, T., van Dijk, F., Lelarge, F., Accard, A.

    Published in Journal of lightwave technology (15-12-2011)
    “…Chromatic dispersion is a limiting factor in intensity-modulated radio-over-fiber links with direct detection. This paper investigates its influence on…”
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    Journal Article
  16. 16

    Applications of hybrid III-V on Silicon devices in optical fiber networks by de Valicourt, G., Accard, A., Kaspar, P., Lelarge, Francois, Levaufre, G., Girard, N., Le Liepvre, A., Make, D., Olivier, S., Malhouitre, S., Duan, G.-H

    “…Recent progress on hybrid integration of III-V on Silicon devices using wafer bonding is presented focusing on hybrid tunable lasers and their applications for…”
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    Conference Proceeding Journal Article
  17. 17

    Feedback-resistant p-type doped InAs/InP quantum-dash distributed feedback lasers for isolator-free 10 Gb/s transmission at 1.55   μ m by Zou, Q., Merghem, K., Azouigui, S., Martinez, A., Accard, A., Chimot, N., Lelarge, F., Ramdane, A.

    Published in Applied physics letters (06-12-2010)
    “…The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based distributed feedback (DFB) lasers is investigated for different values…”
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    Journal Article
  18. 18
  19. 19

    Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm by Moreau, G., Azouigui, S., Cong, D.-Y., Merghem, K., Martinez, A., Patriarche, G., Ramdane, A., Lelarge, F., Rousseau, B., Dagens, B., Poingt, F., Accard, A., Pommereau, F.

    Published in Applied physics letters (11-12-2006)
    “…The authors report the growth of 6-, 9-, and 12-layer InAs∕InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad…”
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    Journal Article
  20. 20

    An analysis of 1.55μm InAs∕InP quantum dash lasers by Heck, S. C., Healy, S. B., Osborne, S., O’Reilly, E. P., Lelarge, F., Poingt, F., Accard, A., Pommereau, F., Le Gouezigou, O., Dagens, B.

    Published in Applied physics letters (23-06-2008)
    “…Calculations show that electron states are not confined in the dashes in 1.55μm InAs∕InP quantum dash-in-a-well laser structures. The combination of strain and…”
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    Journal Article