Search Results - "A. Label"

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory by Chen, Dakai, Wilcox, Edward, Ladbury, Raymond L., Seidleck, Christina, Kim, Hak, Phan, Anthony, LaBel, Kenneth A.

“…We evaluated the effects of heavy ion and proton irradiation for a 3-D NAND flash. The 3-D NAND showed similar single-event upset (SEU) sensitivity to a planar…”
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Tinea Nigra: Dermoscopic Findings by Label, A., Sole, J.J., Larralde, M.

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Becker Nevus: 4 Cases of a Rare Syndrome by Tirelli, L.L., Label, A., Luna, P.C., Larralde, M.

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The Living With a Star Space Environment Testbed Payload by Dyer, C. S., Ryden, K. A., Morris, P. A., Hands, A. D. P., McNulty, P. J., Vaille, J. -R., Dusseau, L., Cellere, G., Paccagnella, A., Barnaby, H. J., Benedetto, A. R., Velazco, R., Bastos, R. Possamai, Brewer, D., Barth, J. L., LaBel, K. A., Campola, M. J., Zheng, Y., Xapsos, M. A.

“…The objectives, instrumentation, methods, and data leading up to launch of the NASA Living With a Star (LWS) Space Environment Testbed (SET) payload onboard…”
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Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis by Berg, M., Poivey, C., Petrick, D., Espinosa, D., Lesea, A., LaBel, K.A., Friendlich, M., Kim, H., Phan, A.

“…A comparison of two scrubbing mitigation schemes for Xilinx field programmable gate array devices is presented. The design of the scrubbers is briefly…”
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32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches by Rodbell, K. P., Heidel, D. F., Pellish, J. A., Marshall, P. W., Tang, H. H. K., Murray, C. E., LaBel, K. A., Gordon, M. S., Stawiasz, K. G., Schwank, J. R., Berg, M. D., Kim, H. S., Friendlich, M. R., Phan, A. M., Seidleck, C. M.

“…Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are…”
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Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory by Oldham, T. R., Chen, D., Friendlich, M., Carts, M. A., Seidleck, C. M., LaBel, K. A.

“…We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high…”
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The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons by Seifert, N., Gill, B., Pellish, J. A., Marshall, P. W., LaBel, K. A.

“…We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS…”
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Nuclear data for space exploration by Smith, Michael S., Vogt, Ramona L., LaBel, Kenneth A.

“…Understanding the harmful effects of galactic cosmic rays (GCRs) on space exploration requires a substantial amount of nuclear data. Specifically, the…”
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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements by Schwank, J R, Shaneyfelt, M R, McMorrow, D, Ferlet-Cavrois, V, Dodd, P E, Heidel, D F, Marshall, P W, Pellish, J A, LaBel, K A, Rodbell, K P, Hakey, M, Flores, R S, Swanson, S E, Dalton, S M

“…The laser energy thresholds for SEU for SOI 1-Mbit SRAMs built in Sandia's 0.35-μm SOI technology were measured using carrier generation by two-photon…”
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Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM by Heidel, D.F., Marshall, P.W., LaBel, K.A., Schwank, J.R., Rodbell, K.P., Hakey, M.C., Berg, M.D., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

“…Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results…”
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Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure by Oldham, T. R., Dakai Chen, Friendlich, M. R., LaBel, K. A.

“…We have compared the data retention of irradiated commercial NAND flash memories at different doses. Activation energies for retention testing at high…”
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Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM by Warren, Kevin M., Weller, Robert A., Sierawski, Brian D., Reed, Robert A., Mendenhall, Marcus H., Schrimpf, Ronald D., Massengill, Lloyd W., Porter, Mark E., Wilkinson, Jeffrey D., LaBel, Kenneth A., Adams, James H.

“…The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends…”
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Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs by Lauenstein, J.-M, Goldsman, N., Liu, S., Titus, J. L., Ladbury, R. L., Kim, H. S., Phan, A. M., LaBel, K. A., Zafrani, M., Sherman, P.

“…The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for…”
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Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs by Tipton, A.D., Pellish, J.A., Hutson, J.M., Baumann, R., Deng, X., Marshall, A., Xapsos, M.A., Kim, H.S., Friendlich, M.R., Campola, M.J., Seidleck, C.M., LaBel, K.A., Mendenhall, M.H., Reed, R.A., Schrimpf, R.D., Weller, R.A., Black, J.D.

“…The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the…”
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Hardness Assurance Testing for Proton Direct Ionization Effects by Schwank, J. R., Shaneyfelt, M. R., Ferlet-Cavrois, V., Dodd, P. E., Blackmore, E. W., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Gouker, P. M., Tam, N., Wong, R., Shi-Jie Wen, Reed, R. A., Dalton, S. M., Swanson, S. E.

“…The potential for using the degraded beam of high-energy proton radiation sources for proton hardness assurance testing for ICs that are sensitive to proton…”
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SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory by Oldham, T.R., Ladbury, R.L., Friendlich, M., Kim, H.S., Berg, M.D., Irwin, T.L., Seidleck, C., LaBel, K.A.

“…An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively…”
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Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs by Ladbury, R. L., Berg, M. D., Wilcox, E. P., LaBel, K. A., Kim, H. S., Phan, A. M., Seidleck, C. M.

“…The speed, tight timing requirements packaging and complicated error behavior of DDR2 and DDR3 SDRAMs pose significant challenges for single-event testing…”
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A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation by Berg, M.D., LaBel, K.A., Hak Kim, Friendlich, M., Phan, A., Perez, C.

“…A methodology for evaluating various types of FPGAs targeted for space missions is presented. The premise is to supply unambiguous SEE information so that…”
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Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs by Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., McMorrow, D., Warner, J. H., Ferlet-Cavrois, V., Gouker, P. M., Melinger, J. S., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Swanson, S. E.

“…The laser pulse energy thresholds for single-event upset measured by single photon and two photon absorption are measured and compared for Sandia SRAMs and…”
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