Search Results - "A. E. Pap"

Effect of deuterium on passivation of Si surfaces by Mizsei, J., Pap, A.E., Gillemot, K., Battistig, G.

“…A properly passivated silicon surface is chemically stable, and all interface properties are constant. The freshly etched Si surface is full of dangling bonds…”
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Carbon nanotube synthesis on oxidized porous silicon by Kordás, K., Pap, A.E., Vähäkangas, J., Uusimäki, A., Leppävuori, S.

“…Carbon nanotubes were grown on thermally oxidized porous silicon by catalytic chemical vapor deposition from the mixture of ferrocene and xylene precursor. The…”
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Laser soldering of flip-chips by Kordás, K., Pap, A.E., Tóth, G., Pudas, M., Jääskeläinen, J., Uusimäki, A., Vähäkangas, J.

“…A novel process for laser soldering of flip-chips on transparent printed circuit board assemblies is presented. The experiments were carried out on silver test…”
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Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals by Horváth, Zs.J., Basa, P., Jászi, T., Molnár, K.Z., Pap, A.E., Molnár, Gy

“…► The charging behavior of MNS and MNOS structures containing Si or Ge nanocrystals are studied. ► Exponential dependence of injected charge on the charging…”
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Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures by Horváth, Zs.J., Basa, P., Molnár, K.Z., Molnár, Gy, Jászi, T., Pap, A.E.

“…Charge injection and retention behaviors of metal-nitride-oxide-silicon (MNOS) memory structures with Si or Ge nanocrystals embedded at a depth of 3nm in the…”
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Packaging of a 3-axial piezoresistive force sensor with backside contacts by Kárpáti, T., Kulinyi, S., Végvári, R., Ferencz, J., Nagy, A., Pap, A. E., Battistig, G.

“…In this paper design aspects and challenging packaging solution of a monolithic 3D force sensor will be presented. The previously developed design and process…”
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Thermal oxidation of porous silicon: Study on structure by Pap, A. E., Kordás, K., Tóth, G., Levoska, J., Uusimäki, A., Vähäkangas, J., Leppävuori, S., George, T. F.

“…The structural changes of porous silicon (PS) samples during oxidation are investigated and analyzed using various microscopy techniques and x-ray diffraction…”
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Makyoh-topography study of the swirl defect in Si wafers by Riesz, Ferenc, Pap, A.E., Ádám, M., Lukács, I.E.

“…Swirl defects in p-type Si wafers are studied by Makyoh topography (MT). Two series of wafers of varying dopant concentration are compared. The unambiguous…”
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Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals by Basa, P., Horváth, Zs.J., Jászi, T., Pap, A.E., Dobos, L., Pécz, B., Tóth, L., Szöllősi, P.

“…In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either…”
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Laser-induced surface activation of LTCC materials for chemical metallization by Kordas, K., Pap, A.E., Saavalainen, J., Jantunen, H., Moilanen, P., Haapaniemi, E., Leppavuori, S.

“…Low-temperature cofired ceramics (LTCCs) are mainly applied in hybrid microelectronics packaging technology, where the fabrication of metallic conductors on…”
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Simultaneous chemical silver and palladium deposition on porous silicon; FESEM, TEM, EDX and XRD investigation by Pap, Andrea Edit, Kordás, Krisztián, Peura, Raija, Leppävuori, Seppo

“…Simultaneous palladium and silver deposition on porous silicon (PS) by immersion plating from aqueous [Pd(NH 3) 4] 2+ and [Ag(NH 3) 2] + complexes were carried…”
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Laser-enhanced selective TiO2 deposition on Si by KORDAS, Krisztian, PAP, Andrea Edit, LEPPÄVUORI, Seppo

“…A novel additive deposition method for the fabrication of TiO2 micro-patterns is demonstrated in this paper. Thin ( < 1 mum) and narrow (~ 3 mum) titanium…”
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Copper plating on and electrical investigation of a low-permittivity cycloolefin-copolymer by Pap, Andrea Edit, Kordás, Krisztián, Jantunen, Heli, Haapaniemi, Esa, Leppävuori, Seppo

“…Adhesive (>5 MPa) and conductive (ρ~2 μΩ cm) copper films with a thickness of ~200 nm were deposited by chemical means on a recently developed low- k…”
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Large area self-assembled masking for photonic applications by Nagy, N., Pap, A. E., Horváth, E., Volk, J., Bársony, I., Deák, A., Hórvölgyi, Z.

“…Ordered porous structures for photonic application were fabricated on p - and n -type silicon by means of masking against ion implantation with…”
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Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals by Zsolt J. Horvath, P. Basa, T. Jaszi, A. E. Pap, Gy. Molnar, A. I. Kovalev, D. L. Wainstein, T. Gerlai, P. Turmezei

“…Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and…”
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Electrostatic force detection during anodic wafer bonding by Karpati, T., Pap, A. E., Adam, M., Ferencz, J., Furjes, P., Battistig, G., Barsony, I.

“…This paper proposes a novel in situ monitoring method for anodic wafer bonding by measuring the evolving electrostatic force between the wafers during the…”
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Optical properties of porous silicon. Part III: Comparison of experimental and theoretical results by Pap, Andrea Edit, Kordás, Krisztián, Vähäkangas, Jouko, Uusimäki, Antti, Leppävuori, Seppo, Pilon, Laurent, Szatmári, Sándor

“…In our previous study, the refractive indices of freestanding porous silicon (PS) layers were derived using the envelope method, where the computation is based…”
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Synthesis and biological evaluation of 2,4-diaminoquinazoline derivatives as novel heat shock protein 90 inhibitors by Thorat, Dhanaji Achyutrao, Doddareddy, Munikumar Reddy, Seo, Seon Hee, Hong, Tae-Joon, Cho, Yong Seo, Hahn, Ji-Sook, Pae, Ae Nim

“…A novel series of 2,4-diaminoquinazoline derivatives were designed, synthesized and biologically evaluated as heat shock protein 90 inhibitors. Novel…”
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Thermal Oxidation of Porous Silicon:  Study on Reaction Kinetics by Pap, Andrea Edit, Kordás, Krisztián, George, Thomas F, Leppävuori, Seppo

“…Porous silicon (PS) samples obtained by dark etching of p+-type silicon wafers are oxidized in dry air, at various temperatures from 200 °C up to 800 °C for…”
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Optical properties of porous silicon.: Part II: Fabrication and investigation of multilayer structures by Kordás, Krisztián, Beke, Szabolcs, Pap, Andrea Edit, Uusimäki, Antti, Leppävuori, Seppo

“…By knowing the wavelength dependent optical parameters (refractive index n and absorption coefficient α) and the obtained thickness of porous silicon (PS)…”
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