Search Results - "A, Angelin Delighta"

Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage by Michel, Ancy, I. V., Binola K. Jebalin, Franklin, S. Angen, Juliet Rani, Sylvia, A., Angelin Delighta, Nirmal, D.

“…A quasi‐vertical gallium nitride (GaN) fin field effect transistor (FinFET) is designed and analyzed to assess the performance of electrical parameters. The…”
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A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications by A, Angelin Delighta, I.V, Binola K Jebalin, Ajayan, J., Franklin, S. Angen, Nirmal, D.

“…Vertical Nanosheet Transistors serves as a potential substitute for the Nanowire and FinFET architecture at advanced technology nodes on account of higher…”
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A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications by Raj Kumar, J.S., Victor Du John, H., I.V, Binola K Jebalin, Ajayan, J., Delighta A, Angelin, Nirmal, D.

“…AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate techniques to improve the device's reliability and optimum performance. This…”
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Dual Material Gate Junctionless Field Effect Transistor for Biosensing Application by A, Angelin Delighta, Moni, D.Jackuline, Gracia, D., Anucia, A. Josephine

“…In this work, we demonstrated the design and simulation of charge plasma based Dual Material Gate Dielectrically Modulated Junctionless Field Effect Transistor…”
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