Search Results - "8th Reliability Physics Symposium"

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  1. 1

    Emitter Avalanche Stress on Gated Transistors by Bosselaar, C.A.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Emitter avalanche stress is of growing importance for the study of dielectric coatings on semiconductors and for the investigation of the reliability of…”
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    Conference Proceeding
  2. 2

    Catastrophic Damage in "Close-Confined" AlGaAs-GaAs Heterojunction Injection Lasers by Kressel, H., Sommers, H. S., Lockwood, H. F., Ettenberg, M., Nelson, H.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The peak optical power at which catastrophic damage occurs in heterojunction lasers has been investigated. The allowable peak power is shown to decrease…”
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  3. 3

    Resistance Changes on Absorption and Desorption of Hydrogen from Evanohm Resistors by Marks, Burton S., Stewart, Robert G.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Hydrogen gas, the foaming agent in RTV-5370 silicone foam encapsulating plastic, caused resistance increases in thin film Evanohm resistors. The hydrogen is a…”
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  4. 4

    Equivalent Circuits Describing the Planar Devices Behavior Under Ionizing Radiations by Martinot, H., Esteve, D., Rey, G.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The main features of the behavior of bipolar and MOS transistors under ionizing radiations are first briefly reminded and the physical origin of degradation is…”
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  5. 5

    Use a SEM on a Production Line? by Adolphsen, John W., Anstead, Robert J.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The use of the scanning electron microscope (SEM) as an in-line, quality control tool to selectively sample-screen semiconductor devices for metallization…”
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  6. 6

    A Systems Oriented Components Selection Optimization Technique by Hollingshead, Charles O.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…A technique is introduced which optimizes the selection of parts for system application by reliability/quality levels through systematizing the compilation and…”
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  7. 7

    Use of Test Patterns in Evaluating the Reliability of Integrated Circuits by Sahni, Ravinder J.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The reliability of a large scale integrated circuit chip is an aggregate of the reliability of each of its constituents. Therefore, the total failure rate is…”
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  8. 8

    Reliability Studies of LSI Arrays Employing Al-Si Schottky Barrier Devices by Jenkins, R. T., Fitzgerald, D. J.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Recently digital bipolar LSI arrays employing Al-Si Schottky barrier devices have become commercially available. The introduction of a novel semiconductor…”
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  9. 9

    Interface Films in the Si-Al System by Lawrence, J. E., Khidr, M. S.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Carbon-like interface films exert both a metallurigical and electrical effect on Semiconductor products. Test devices without contamination have uniform…”
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  10. 10

    Ambient Effects on Gold-Aluninum Bonds by Rossiter, Thomas J.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…It has been observed that gold-aluminum bond degradation is dependent upon the ambient gas that exists in an integrated circuit package. Hermetic samples,…”
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  11. 11

    Current Crowding Effects at Aluminun-Silicon Contacts by Prokop, G. S., Ting, C. Y., Joseph, R. R.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The magnitude of current crowding and its effects on failure mechanisms at aluminum-silicon contacts have been studied by using an enlarged contact. Current…”
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  12. 12

    Purple Plague Revisited by Philofsky, Elliott

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Intermetallic formation in gold-aluminum systems has been studied at 200°C to 460°C using butt-welded diffusion couples. The predominant intermetallic phase…”
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  13. 13

    Degradation of GaAs and Ga1-xAlxAs Light Emitting Diodes by Blum, J. M., Konnerth, K. L., Marinace, J. C., Woodall, J.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Life test data on the degradation characteristics of GaAs and GaAlAs light emitting diodes are presented. The GaAs data show the effects of diode processing…”
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  14. 14

    Power Handling Capability and Temperature Distribution for Different Transistor Structures by Arlt, Manfred, Grasser, Leo, Guckel, Helmut, Rucker, Dieter

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…To achieve good high-power performance, power transistors are often constructed having a fine interdigitated structure. These transistors are very susceptible…”
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  15. 15

    Room Temperature Instabilities Observed on Silicon Gate Devices by Faggin, F., Forsythe, D. D., Klein, T.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…A room temperature ionic instability has been observed on p-channel silicon gate MOS devices processed in a specific manner. This instability appears as a…”
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  16. 16

    Can Plastic Encapsuiated Microcircuits Provide Reliability with Economy? by Brauer, Joseph B., Kapfer, Vincent C., Tamburrino, Alfred L.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…Associated with plastic encapsulation for micro-circuits is a set of failure mechanisms which may make these devices unsuitable for high reliability use…”
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  17. 17

    Accelerated Humidity Tests for Plastic Encapsulated Devices by Bair, Byron L., Herr, Erwin A.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…This late news paper presents the results of the examination of the screening effectiveness of steam pressure and boiling water stresses for rapidly evaluating…”
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  18. 18

    Theory of the Failure of Semiconductor Contacts by Electromigration by Oliver, C. B., Bower, D. B.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…A theory is presented which predicts the time required for a metal film conductor on a silicon substrate to fail as a result of electromigration. The failure…”
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  19. 19

    Gold-Aluminum Bond Failure Mechanism by Haefling, J. F., Meyer, D. E.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The degradation of Au/Al contacts on semiconductor devices as a function of process parameters and environment has been studied. Test samples were bonded under…”
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  20. 20

    Degradation of GaAs-P Light Emitting Diodes by Grenning, D., Lamb, R., Duffy, P.

    Published in 8th Reliability Physics Symposium (01-04-1970)
    “…The expectation of large volume usage of solid-state lamps, using the GaAs-P system, has generated tremendous effort in this infant field. Data on factors…”
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