Search Results - "8th Reliability Physics Symposium"
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1
Emitter Avalanche Stress on Gated Transistors
Published in 8th Reliability Physics Symposium (01-04-1970)“…Emitter avalanche stress is of growing importance for the study of dielectric coatings on semiconductors and for the investigation of the reliability of…”
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2
Catastrophic Damage in "Close-Confined" AlGaAs-GaAs Heterojunction Injection Lasers
Published in 8th Reliability Physics Symposium (01-04-1970)“…The peak optical power at which catastrophic damage occurs in heterojunction lasers has been investigated. The allowable peak power is shown to decrease…”
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3
Resistance Changes on Absorption and Desorption of Hydrogen from Evanohm Resistors
Published in 8th Reliability Physics Symposium (01-04-1970)“…Hydrogen gas, the foaming agent in RTV-5370 silicone foam encapsulating plastic, caused resistance increases in thin film Evanohm resistors. The hydrogen is a…”
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4
Equivalent Circuits Describing the Planar Devices Behavior Under Ionizing Radiations
Published in 8th Reliability Physics Symposium (01-04-1970)“…The main features of the behavior of bipolar and MOS transistors under ionizing radiations are first briefly reminded and the physical origin of degradation is…”
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5
Use a SEM on a Production Line?
Published in 8th Reliability Physics Symposium (01-04-1970)“…The use of the scanning electron microscope (SEM) as an in-line, quality control tool to selectively sample-screen semiconductor devices for metallization…”
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6
A Systems Oriented Components Selection Optimization Technique
Published in 8th Reliability Physics Symposium (01-04-1970)“…A technique is introduced which optimizes the selection of parts for system application by reliability/quality levels through systematizing the compilation and…”
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7
Use of Test Patterns in Evaluating the Reliability of Integrated Circuits
Published in 8th Reliability Physics Symposium (01-04-1970)“…The reliability of a large scale integrated circuit chip is an aggregate of the reliability of each of its constituents. Therefore, the total failure rate is…”
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8
Reliability Studies of LSI Arrays Employing Al-Si Schottky Barrier Devices
Published in 8th Reliability Physics Symposium (01-04-1970)“…Recently digital bipolar LSI arrays employing Al-Si Schottky barrier devices have become commercially available. The introduction of a novel semiconductor…”
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9
Interface Films in the Si-Al System
Published in 8th Reliability Physics Symposium (01-04-1970)“…Carbon-like interface films exert both a metallurigical and electrical effect on Semiconductor products. Test devices without contamination have uniform…”
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10
Ambient Effects on Gold-Aluninum Bonds
Published in 8th Reliability Physics Symposium (01-04-1970)“…It has been observed that gold-aluminum bond degradation is dependent upon the ambient gas that exists in an integrated circuit package. Hermetic samples,…”
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11
Current Crowding Effects at Aluminun-Silicon Contacts
Published in 8th Reliability Physics Symposium (01-04-1970)“…The magnitude of current crowding and its effects on failure mechanisms at aluminum-silicon contacts have been studied by using an enlarged contact. Current…”
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12
Purple Plague Revisited
Published in 8th Reliability Physics Symposium (01-04-1970)“…Intermetallic formation in gold-aluminum systems has been studied at 200°C to 460°C using butt-welded diffusion couples. The predominant intermetallic phase…”
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13
Degradation of GaAs and Ga1-xAlxAs Light Emitting Diodes
Published in 8th Reliability Physics Symposium (01-04-1970)“…Life test data on the degradation characteristics of GaAs and GaAlAs light emitting diodes are presented. The GaAs data show the effects of diode processing…”
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14
Power Handling Capability and Temperature Distribution for Different Transistor Structures
Published in 8th Reliability Physics Symposium (01-04-1970)“…To achieve good high-power performance, power transistors are often constructed having a fine interdigitated structure. These transistors are very susceptible…”
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15
Room Temperature Instabilities Observed on Silicon Gate Devices
Published in 8th Reliability Physics Symposium (01-04-1970)“…A room temperature ionic instability has been observed on p-channel silicon gate MOS devices processed in a specific manner. This instability appears as a…”
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16
Can Plastic Encapsuiated Microcircuits Provide Reliability with Economy?
Published in 8th Reliability Physics Symposium (01-04-1970)“…Associated with plastic encapsulation for micro-circuits is a set of failure mechanisms which may make these devices unsuitable for high reliability use…”
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17
Accelerated Humidity Tests for Plastic Encapsulated Devices
Published in 8th Reliability Physics Symposium (01-04-1970)“…This late news paper presents the results of the examination of the screening effectiveness of steam pressure and boiling water stresses for rapidly evaluating…”
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18
Theory of the Failure of Semiconductor Contacts by Electromigration
Published in 8th Reliability Physics Symposium (01-04-1970)“…A theory is presented which predicts the time required for a metal film conductor on a silicon substrate to fail as a result of electromigration. The failure…”
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19
Gold-Aluminum Bond Failure Mechanism
Published in 8th Reliability Physics Symposium (01-04-1970)“…The degradation of Au/Al contacts on semiconductor devices as a function of process parameters and environment has been studied. Test samples were bonded under…”
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20
Degradation of GaAs-P Light Emitting Diodes
Published in 8th Reliability Physics Symposium (01-04-1970)“…The expectation of large volume usage of solid-state lamps, using the GaAs-P system, has generated tremendous effort in this infant field. Data on factors…”
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