Search Results - "21st International Reliability Physics Symposium"

A Non Contact Voltage Measurement Technique using Auger Spectroscopy by Patterson, Joseph M., Smith, Michael C.

“…Scanning Auger spectroscopy is commonly used for surface analysis to identify elements on a given sample. The identification is accomplished by the use of an…”
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Aluminum Conductor Line Corrosion by Bhide, Vishwas, Eldridge, J. M.

“…Effects of P2O5 concentration on the surface conductivity of Phospho Silicate Glass (PSG) films and the attendant corrosion of Al conductor lines on the PSG…”
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Soft Pipes Cause Reliability Problem in Bipolar Integrated Circuits by Casey, Jack, Lee, Jay, Redman, D. John, Zinmner, Don

“…An investigation of yield-limiting bipolar emitter-collector shorts (commonly called "pipes") uncovered a "soft" pipe reliability problem. For us the major…”
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A Source of Degradation of Plastic Encapsulated Devices by Kalmar, G., Nenyei, ZS

“…Some chemical degradation effects in plastic encapsulated semiconductor devices are analysed by the use of pressurecooker tests. After summarising the possible…”
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Model for Oxide Wearout Due to Charge Trapping by Meyer, William K., Crook, Dwight L.

“…Scaling of MOS gate oxides below 200Å can result in wearout of intrinsic oxides. This paper presents studies of thin gate oxides which show that the time…”
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Rapid Assessment of the Humidity Dependence of IC Failure Modes by Use of HAST by Gunn, Jeffrey E., Camenga, Robert E., Malik, Sushil K.

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Reliability of Ku-Band GaAs Power FETs Under Highly Stressed RF Operation by White, P.M., Rogers, C.G., Hewitt, B.S.

“…Accelerated life tests under rf drive have been performed on power FETs with sub-micron aluminum gates and plated via-hole source connections designed for…”
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A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers by Todoroki, S., Takahashi, T., Aiki, K., Uchida, H.

“…Dark defects related to degradation in GaAlAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of…”
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The Application of a Dynamic Technique to the Study of Electromigration Kinetics by Pasco, R.W., Schwarz, J.A.

“…A temperature-ramp technique is presented that enables determination of the kinetic parameters for electromigration processes. With this method,…”
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The Adsorption of Water on Mietallic Packages by Swartz, W. E., Linn, J. H., Ammons, J. M., Kovac, M., Wilson, K.

“…This study presents data on both the chemical and physical processes of water adsorption/desorption on gold plated Kovar lids under various conditions of…”
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VLSI Package Reliability Workshop Report by Zimmermant, Daniel D., Schafft, Harry A.

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The Effect of Entrapped Krypton 85 Gas on Device Reliability by Fisch, David, Mozdzen, Tom, Roberts, Gerow

“…The effect of entrapped Kr85 radioactive gas upon the threshold voltage and junction leakage of MOS transistors is quantified through device modeling and…”
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GaAs Device Reliability Workshop Summary by Christou, A.

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Catastrophic Burn Out in Power VDMOS Field-Effect Transistors by Slusark, W. J., Laurie, R. J., Schnable, G. L., Neilson, J., Finn, E.

“…Power vertical double-diffused MOS field-effect transistors (VDMOS) are finding wide use in satellite applications. In particular, IRF-l5O transistors…”
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A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices by Noyori, M., Nakata, Y., Kuninobu, S.

“…In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length…”
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Correlation of Analytical Facilities by Moore, Benjamin A.

“…New and emerging technologies such as VHSIC/VLSI and the expanded use of hybrids have presented a new series of problems in correlating analytical laboratory…”
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Implications QF a Model for Optimum Burn-In by Wager, A. J., Thompson, D. L., Forcier, A. C.

“…The importance of burn-in as a screen to reduce failure rates (particularly early fails) of LSI/VLSI devices, and thereby achieve reliability objectives, is…”
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Trapping in Tunnel Oxides Grown on Textured Polysilicon by Prickett, B. L., Caywood, J. M., Ellis, R. K.

“…The generation of electron traps in Poly Silicon Oxide by the application of an electric field in the absence of current is described. The assymetric I-V…”
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Electromigration Failure in Thin Film Silicides and Polysilicon/Silicide (Polycide) Structures by Lloyd, J. R., Sullivan, M. J., Hopper, G. S., Coffin, J. T., Severn, E. T., Jozwiak, J. L.

“…Thin film conductor stripes (150 nm thick), of silicides of tantalum and tungsten deposited on to thermal oxide as well as silicides deposited on to 150 nm of…”
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New EPROM Data-Loss Mechanisms by Mielke, Neal R.

“…Data-loss mechanisms in present-generation EPROMs have been studied. Defect-related data loss is primarily due to interpoly-oxide defects. This is a change…”
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