Search Results - "2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)"

Understanding and Predicting the Activation Energy of Oxygen Migration in Pr0.5Ca0.5MnO₃: A DFT study by Inge, Shashank V., Pandey, Adityanarayan, Ganguly, Udayan, Bhattacharya, Amrita

“…\mathrm{Pr}_{1-x}\mathrm{Ca}_{x}\mathrm{MnO}_{3}(\mathrm{PCMO}(x)) is a popularly explored material for the resistive random access memory (RRAM) application…”
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Recorded Ferroelectric Polarization Switching of Hf0.5Zr0.5O₂ Capacitors Achieved by Thermal Rewake-up by Zhang, Zichong, Yang, Yifan, Su, Rui, Lin, Tonghui, Miao, Xiangshui, Wang, Xingsheng

“…Hf 0.5 Zr 0.5 O 2 (HZO) capacitors are well prepared with excellent ferroelectricity, and recorded polarization switching…”
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Dual-k Reconfigurable Silicon Nanowire Schottky Barrier Transistor for Biosensing by Kumar, Anil, Kale, Sumit

“…In this study, Dual-k Reconfigurable Silicon Nanowire Schottky Barrier Transistor (Dk R SiNW SBT) is investigated and discussed for biosensing applications. We…”
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Monolayer HfS₃: A Potential Candidate for Low-Power and High-Performance Field-Effect Transistors by Naseer, Ateeb, Bhowmick, Somnath, Agarwal, Amit, Chauhan, Yogesh Singh

“…The two-dimensional (2-D) materials hold promise for the ultra-scaled future logic devices. Major semiconductor companies are actively dedicating substantial…”
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Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors by De, Sourav, Cho, Chen-Yi, Ali, Tarek, Banerjee, Writam, Ramirez, Lucia Perez, Barrett, Nick, Majumder, Sayani, Hou, Tuo-Hung

“…The discovery of ferroelectricity in hafnium oxide (HfO 2 ) has proved to be a game changer in the potential applications of ferroelectric non-volatile…”
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Impact of Doping CsPbBr3 with Organic Iodide Salts on Memory Performance by Nath, Bidisha, Panchal, Ashutosh, Ramamurthy, Praveen C, Mahapatra, Debiprosad Roy, Hegde, Gopalkrishna

“…This template has been tailored for output on A4- or letter-sized paper. The intriguing memory effect in CsPbBr 3 perovskite is of interest in materials…”
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Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications by Das, Dipjyoti, Park, Hyeonwoo, Wang, Zekai, Zhang, Chengyang, Ravindran, Prasanna Venkatesan, Park, Chinsung, Afroze, Nashrah, Hsu, Po-Kai, Tian, Mengkun, Chen, Hang, Chern, Winston, Lim, Suhwan, Kim, Kwangsoo, Kim, Kijoon, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We experimentally demonstrate a novel gate stack engineering technique by introducing a Tunnel Dielectric Layer (TDL) between two Ferroelectric (FE) layers,…”
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A comparative study of two-step and three-step annealing processes for PVDF added FASnI3 film quality and solar cell by Basavaraju, U, Bajpai, Yash, Nagahanumaiah, Ramamurthy, Praveen C

“…Among the non-toxic perovskites, tin-halide perovskite solar cell (PSC) is the most attractive for commercial application. However, their efficiencies and…”
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Influence of ALD pulse times and deposition temperature on electrical properties and reliability of MIM decoupling capacitors based on Al-doped ZrO2 high-κ dielectric in BEoL conditions by Falidas, Konstantinos Efstathios, Kuhnel, Kati, Everding, Maximilian, Czernohorsky, Malte, Heitmann, Johannes

“…This paper explores the impact of important ALD parameters, especially of precursor/reactant pulse times as well as of deposition temperature and the…”
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Erase Efficiency Improvement of Ferroelectric FET with IGZO Channel by P-Type SnOx Layer by Huang, Jiahao, Jin, Chengji, Zhang, Hongrui, Liu, Yan, Yu, Xiao, Han, Genquan

“…We have investigated the influence of the p-type oxide semiconductor (OS) insertion layer on the memory characteristics of InGaZnO x (IGZO)-channel…”
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High-k dielectric integration to improve breakdown characteristics of β-Ga₂O₃ Schottky diode by Sharma, Pooja, Parasubotu, Yeshwanth, Lodha, Saurabh

“…In this work, we have utilized a high-k dielectric material, bismuth zinc niobium oxide (BZN), to fabricate metal-insulator-semiconductor (MIS) heterostructure…”
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Indigenous back-end-of-line compatible SiO2-based One-Time Programmable Memory for Secured Spiking Neural Network Inference Accelerator by Deshmukh, Shreyas, Biswas, Anmol, Kadam, Abhishek, Singh, Ajay K., Deshpande, Veeresh, Ganguly, Udayan

“…The low-power, biology-inspired spiking neural networks (SNN) based architectures have facilitated artificial intelligence applications for edge applications…”
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Ultrasensitive Photo-Thermal Multimodal Sensory based on Self-Doping Modulation of Bi2O2Se Semiconductor by Liu, Shuo, Xu, Lei, Liu, Junling, Huang, Ru, He, Ming

“…Herein, high-performance photo-thermal multimodal sensors based on novel two-dimentional layered Bi 2 O 2 Se semiconductor were demonstrated, wherein the…”
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Ohmic Au-MoS2 Contacts Enabled by Re Adsorbed MoS2 Source/Drain Regions: An Ab-initio Quantum Transport Study by Kharwar, Saurabh, Sinha, Soham, Agarwal, Tarun Kumar

“…This study delves into the improved transport properties of 2D MoS 2 devices with metal contacts achieved through substitutional doping or adsorbed metals. We…”
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Study of Trap Generation in NAND Flash Tunnel Oxide using TCAD by Kumar, Anuj, Tiwari, Ravi, Bajaj, Mohit, Dolgos, Denis, Smith, Lee, Mahapatra, Souvik

“…The Physical TCAD models, which have been validated for the aging of logic devices, are utilized to simulate trap generation (TG) in a memory device during…”
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Ultra-High Endurance (>1012) and High Drive-Current Selector in Sub-30nmΦ Cell using Stable Oxide Doped with As-Se Free High Melting-Point Compound by Matsushima, Yosuke, Iwasaki, Takeshi, Daibou, Tadaomi, Sasaki, Takayuki, Shimoda, Yutaro, Qi, Zhu, Goto, Masakazu, Sato, Yuya, Onizaki, Makoto, Nagamine, Makoto, Amano, Minoru, Kawai, Hiroki, Tokuhira, Hiroki, Chokawa, Kenta, Takashima, Rina, Tsukagoshi, Takayuki, Saitoh, Masumi, Ikeda, Keiji, Komatsu, Katsuyoshi

“…We demonstrate ultra-high endurance selector with excellent scalability toward high-performance cross-point storage class memory (SCM). By employing stable…”
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Reduction of contact resistance to PVD-MoS₂ film using aluminum-scandium alloy (AISc) edge contact by Imai, Shinya, Kajikawa, Ryosuke, Kawanago, Takamasa, Muneta, Iriya, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Kakushima, Kuniyuki, Wakabayashi, Hitoshi

“…The contact resistance was reduced by aluminum-scandium alloy (AlSc) edge contact for the MoS 2 film deposited by sputtering. Moreover, after annealing in a…”
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High-Speed Electrical Transient Thermometry of Monolayer MoS2 by Ber, Emanuel, Yalon, Eilam

“…Self-heating greatly limits performance of devices based on two-dimensional (2D) materials. Here, we present a novel high-speed thermometry method for 2D…”
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NiO/Ni2O3 based top gated junctionless field effect device for selective Cr(VI) ion detection in water by Mishra, Shreyansh, Mahalik, Sukanya, Sengupta, Apabrita, Eshore, Abhijit Narayan, Guha, Prasanta Kumar, Dey, Sayan

“…We demonstrated NiO/Ni 2 O 3 (semiconductor/dielectric) top gated field effect device for Cr(VI) detection. The device showed excellent sensing with a maximum…”
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Comparative Analysis of Switching Efficiency of GeTe and VO2 based RF Switches by Mishra, Abhishek, Chauhan, Yogesh Singh, Verma, Amit

“…Phase change materials (PCMs) are extensively employed in switchable, reconfigurable, and tunable devices operating from DC to optical frequencies because of…”
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