Search Results - "2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)"

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  1. 1

    A D-band 20.4 dBm OP1dB Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology by Gielen, Senne, Zhang, Yang, Ingels, Mark, Reynaert, Patrick

    “…This paper presents a high-efficiency transformer-based D-band power amplifier (PA) in 250-nm InP HBT. The PA has a saturated output power of 21 dBm and peak…”
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    Conference Proceeding
  2. 2

    305-GHz Cascode Power Amplifier Using Capacitive Feedback Fabricated Using SiGe HBT's with fmax of 450 GHz by Ghosh, Suprovo, Zhang, Frank, Guo, Haidong, O, Kenneth K.

    “…A 305-GHz power amplifier (PA) fabricated in a 130-nm SiGe HBT BiCMOS technology with HBT f_{t}/f_{max}=350/450 GHz is presented. The PA employs 4 cascode…”
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    Conference Proceeding
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    Frequency-Domain-Equalization-based Full-Duplex Receiver with Passive-Frequency-Shifting N-Path Filters Achieving >53 dB SI Suppression Across 160 MHz BW by Garimella, Sastry, Garikapati, Sasank, Nagulu, Aravind, Kadota, Igor, Davidson, Alfred, Zussman, Gil, Krishnaswamy, Harish

    “…Wideband full-duplex (FD) transceivers pose a significant challenge as they require >100dB of self-interference cancellation (SIC) over large bandwidths. This…”
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    Conference Proceeding
  5. 5

    A 57.6 Gb/s Wireless Link based on 26.4 dBm EIRP D-band Transmitter Module and a Channel Bonding Chipset on CMOS 45nm by Gonzalez-Jimenez, Jose Luis, Siligaris, Alexandre, Hamani, Abdelaziz, Foglia-Manzillo, Francesco, Courouve, Pierre, Cassiau, Nicolas, Dehos, Cedric, Clemente, Antonio

    “…This paper presents a baseband to D-band wireless link based on a transmitter module integrating a 45-nm CMOS channel bonding chipset and a high-gain antenna…”
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  6. 6

    A 23-30 GHz 4-Path Series-Parallel-Combined Class-AB Power Amplifier with 23 dBm Psat, 38.5% Peak PAE and 1.3° AM-PM Distortion in 40nm Bulk CMOS by Gu, Junjie, Qin, Haoqi, Xu, Hao, Liu, Weitian, Han, Kefeng, Yin, Rui, Deng, Lei, Shen, Xiaoliang, Duan, Zongming, Gao, Hao, Yan, Na

    “…This paper presents a 4-path series-parallel combined highly-efficient class-AB power amplifier (PA) with broad bandwidth and low AM-PM distortion in CMOS…”
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    Conference Proceeding
  7. 7

    Artificial Neural Networks for GaN HEMT Model Extraction in D-band Using Sparse Data by Arias-Purdue, Andrea, Lam, Eythan, Tao, Jonathan, O'Malley, Everett, Buckwalter, James F.

    “…We describe the application of Artificial Neural Networks (ANNs) for Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) model parameter extraction…”
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  8. 8

    A Frequency-Tunable Dual-Path Frequency-Translated Noise-Cancelling Self-Interference Canceller RX with>16dBm SI Power-Handling in 65nm CMOS by Essawy, Mostafa, Rashed, Kareem, Aghighi, Amin, Natarajan, Arun

    “…A dual-path self-interference (SI) cancellation architecture is presented for high-power SI cancellation (SIC) for simultaneous transmit and receive. The…”
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    Conference Proceeding
  9. 9

    An Ultra-Wideband and Compact Active Quasi-Circulator With Phase Alternated Differential Amplifier by Yoo, Dongho, Hwang, Jun, Min, Byung-Wook

    “…This paper presents a new design for an active quasi-circulator that utilizes a phase alternated differential amplifier to achieve ultra-wideband and compact…”
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    Conference Proceeding
  10. 10

    A CMOS 160GHz Integrated Permittivity Sensor with Resolution of 0.05% Δεr by Yu, Hai, Ding, Xuan, Chen, Jingjun, Saber, Sajjad Sabbaghi, Gu, Qun Jane

    “…This paper presents a high-resolution permittivity sensor at 160GHz in 28nm CMOS. It incorporates a THz high Q silicon whispering gallery mode resonator sensor…”
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    Conference Proceeding
  11. 11

    Exploration of Design / Layout Tradeoffs for RF Circuits using ALIGN by Poojary, Jitesh, S, Ramprasath, Sapatnekar, Sachin S., Harjani, Ramesh

    “…The extended manual layout process for RF and analog/mixed-signal design restricts design space exploration and limits design productivity. This work…”
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    Conference Proceeding
  12. 12

    High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching by Kim, Joon-Hyung, Son, Jeong-Taek, Lim, Jung-Taek, Lee, Jae-Eun, Song, Jae-Hyeok, Baek, Min-Seok, Choi, Han-Woong, Lee, Eun-Gyu, Choi, Sunkyu, Lee, Chong-Min, Yeo, Sung-Ku, Kim, Choul-Young

    “…This study presents a 32-to-46-GHz two-stage low noise amplifier (LNA) with a three-winding transformer-based input matching network. The proposed matching…”
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  13. 13

    A Radiation-Hardened by Design 15-22GHz LC-VCO Charge-Pump PLL Achieving -240dB FoM in 22nm FinFET by Dolt, David, Palermo, Samuel

    “…This works presents a 15.0-22.0 GHz radiation hardened PLL for space applications designed in a 22nm FinFET process with radiation hardening techniques for…”
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  14. 14

    A mm-wave CMOS/Si-Photonics Hybrid-Integrated Software-Defined Radio Receiver Achieving> 80-dB Blocker Rejection of < −10 dBm In-Band Blockers by Rady, Ramy, Luo, Yu-Lun, Madsen, Christi, Palermo, Samuel, Entesari, Kamran

    “…This paper presents a hybrid-integrated mm-wave software-defined radio (SDR) receiver front-end implemented with silicon photonics and CMOS chips. The proposed…”
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  15. 15

    A mm-Wave Blocker-Tolerant Receiver Achieving <4 dB NF and −3.5 dBm B1dB in 65-nm CMOS by Zolkov, Erez, Ginzberg, Nimrod, Cohen, Emanuel

    “…Digital beam-forming requires highly linear receivers (RXs), as null steering is performed only in digital baseband (BB). This paper presents a highly linear…”
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  16. 16

    A D-band Calibration-Free Passive 360° Phase Shifter With 1.2°RMS Phase Error in 45 nm RFSOI by Abbasi, Mohammadreza, Lee, Wooram

    “…This paper presents a new concept of passive phase shifters based on manipulating propagation delay through two parallel transmission lines periodically…”
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  17. 17

    A 65 nm CMOS Current-Mode Receiver Frontend with Frequency-translational Noise Cancelation and 425 MHz IF Bandwidth by Guo, Benqing, Wang, Haishi, Li, Lei, Zhou, Wanting

    “…An LNA-first receiver frontend including the main/auxiliary paths is proposed. A frequency-translational noise cancellation is attained at the input of a…”
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  18. 18

    A 4.4mW Inductorless 2-20 GHz Single-Ended to Differential Frequency Doubler in 45 nm RFSOI CMOS Technology by Meyer, A., Leyrer, M. L., Ziegler, C., Maier, M., Lammert, V., Issakov, V.

    “…This work presents a miniature inductorless frequency doubler with high fundamental rejection, wide bandwidth, and single-ended to differential conversion. By…”
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  19. 19

    A 6-22 GHz CMOS Phase Shifter with Integrated mm-Wave LO by Ershengoren, Natan, Socher, Eran

    “…In this work we propose a new architecture for a wideband phase shifter, based on upconversion and downconversion of the wideband input signal using…”
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  20. 20

    A 4.8-6.4-GHz GaN MMIC Front-End Module with Enhanced Back-off Efficiency and Compact Size by Lv, Guansheng, Chen, Wenhua, Chen, Xiaofan, Chen, Long, Feng, Zhenghe

    “…A back-off efficient transmit/receive (T/R) front-end module (FEM) architecture is presented in this paper. On one hand, switchless class-G (SLCG) topology is…”
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    Conference Proceeding