Search Results - "2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)"

New opportunity of ferroelectric tunnel junction memory with ultrathin HfO2-based oxides by Xuan Tian, Toriumi, Akira

“…Ferroelectric tunnel junctions with ultra-thin Y-doped HfO 2 film was investigated for the low power, high speed, non-volatile memory. Polarization…”
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Assessing device reliability margin in scaled CMOS technologies using ring oscillator circuits by Kerber, A., Cimino, S., Guarin, F., Nigam, T.

“…Device performance enhancement elements are frequently reducing device reliability margin in scaled CMOS technologies. To assess the impact of HCI degradation…”
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Thickness-independent behavior of coercive field in HfO2-based ferroelectrics by Migita, Shinji, Ota, Hiroyuki, Yamada, Hiroyuki, Sawa, Akihito, Toriumi, Akira

“…Electrical properties of Hf-Zr-O films with several thicknesses are studied. Decent ferroelectric performances are obtained in a wide range of film thickness…”
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Exploiting NbOx metal-insulator-transition device as oscillation neuron for neuro-inspired computing by Ligang Gao, Pai-Yu Chen, Shimeng Yu

“…In this work, we fabricated the Pt/NbO x /Pt MIT device showing threshold switching. XPS results revealed that there are mixed NbO 2 and Nb 2 O 5 phases in the…”
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A scalable Si-based micro thermoelectric generator by Watanabe, Takanobu, Asada, Shuhei, Taiyu Xu, Hashimoto, Shuichiro, Ohba, Shunsuke, Himeda, Yuya, Yamato, Ryo, Hui Zhang, Tomita, Motohiro, Matsukawa, Takashi, Kamakura, Yoshinari, Ikeda, Hiroya

“…A new device architecture of micro thermoelectric generator (μ-TEG) is proposed. The μ-TEG utilizes silicon nanowires as the thermoelectric (TE) material, and…”
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Impact of e-SiGe S/D processes on FinFET PFET TDDB reliability by Ranjan, R., Uppal, S., Yu, H., Parameshwaran, B., Nigam, T., Kerber, A., LaRow, C., Natarajan, M. I.

“…The impact of source/drain e-SiGe process engineering on time dependent dielectric breakdown (TDDB) on core PFETs fabricated with bulk FinFET technology is…”
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New analytical equations for skin and proximity effects in interconnects operated at high frequency by Haojun Zhang, Jian-Hsing Lee, Iyer, Natarajan Mahadeva, Linjun Cao

“…For the first time, analytical equations for skin and proximity effects are derived to successfully describe current distributions in advanced CMOS technology…”
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Physics based system simulation for robot electro-mechanical control design by Maiti, T. K., Chen, L., Miura-Mattausch, M., Koul, S. K., Mattausch, H. J.

“…The aim of our investigation is to develop complete electro-mechanical system simulation. The present developed prototype system includes pressure sensors,…”
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Analysis and modeling of capacitances in halo-implanted MOSFETs by Gupta, Chetan, Agarwal, Harshit, Dey, Sagnik, Chenming Hu, Chauhan, Yogesh S.

“…In this paper, we report the anomalous behavior of capacitances in halo channel MOSFET for the linear and saturation regions. Unlike MOSFETs these devices have…”
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Micro structuring polydimethylsiloxane elastomer film with 3D printed mold for low cost and high sensitivity flexible capacitive pressure sensor by Bengang Zhuo, Sujie Chen, Xiaojun Guo

“…3D printing is used to fabricate molds for micro-structuring the polydimethylsiloxane (PDMS) film. The fabricated sensor device using the micro-structured PDMS…”
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Online training on RRAM based neuromorphic network: Experimental demonstration and operation scheme optimization by Peng Yao, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian

“…In this work, online training is experimentally demonstrated on a neuromorphic network built with 1k-bit 1T1R RRAM array. The 1T1R RRAM cells in the array…”
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Proximity gettering technology for advanced CMOS image sensors using C3H5 carbon cluster Ion implantation techniques by Kurita, Kazunari, Kadono, Takeshi, Okuyama, Ryosuke, Masada, Ayumi, Koga, Ryou Hirose Yoshihiro, Okuda, Hidehiko

“…CMOS image sensor has been widely used for ubiquitous devices. However, CMOS image sensor devices performance is dramatically influenced by process induced…”
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Critical discussion on temperature dependence of BTI in planar and FinFET devices by Srinivasan, P., Nigam, Tanya

“…The impact of temperature (T) on BTI time slope (n) and voltage acceleration (VAE) in MGHK planar and FinFETs are discussed here. Steeper time slopes and…”
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FinFET/nanowire design for 5nm/3nm technology nodes: Channel cladding and introducing a "bottleneck" shape to remove performance bottleneck by Moroz, Victor, Huang, Joanne, Munkang Choi

“…Transition from planar MOSFETs to FinFETs enabled scaling beyond 28nm node. At 5nm/3nm design rules, a transition from FinFETs to nanowires has to be…”
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Impact of current distribution on RRAM array with high and low Ion/Ioff devices by Zackriya, V. Mohammed, Chin, Albert, Kittur, Harish M.

“…Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with I on /I off of 26 and 925…”
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InAs MOS-HEMT power detector for 1.0 THz on quartz glass by Kume, Eiji, Ishii, Hiroyuki, Hattori, Hiroyuki, Wen-Hsin Chang, Ogura, Mutsuo, Kanaya, Haruichi, Asano, Tanemasa, Maeda, Tatsuro

“…Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was…”
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Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET by Shimizu, Jun'ichi, Ohashi, Takumi, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi

“…We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2…”
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Analysis of subthreshold swing and internal voltage amplification for hysteresis-free negative capacitance FinFETs by Pin-Chieh Chiu, Vita Pi-Ho Hu

“…We present the device design guideline for hysteresis-free negative capacitance FinFETs (NC-FinFETs) to enhance the internal voltage amplification (A v ) and…”
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Uniformity improvements of low current 1T1R RRAM arrays through optimized verification strategy by Shan Wang, Xinyi Li, Huaqiang Wu, Bin Gao, Ning Deng, Dong Wu, He Qian

“…This paper systematically analyzed and optimized the operation parameters of low current 1T1R RRAM arrays. Considering both thermal and electrical field driven…”
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Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films by Hirano, Shin, Shimizu, Jun'ichi, Matsuura, Kentaro, Ohashi, Takumi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi

“…We investigate crystallinity of sputtered MoS 2 films formed in various sputtering conditions to enhance the migration. We found that high substrate…”
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