Search Results - "2015 15th Non-Volatile Memory Technology Symposium (NVMTS)"

Neuromorphic hybrid RRAM-CMOS RBM architecture by Suri, Manan, Parmar, Vivek, Kumar, Ashwani, Querlioz, Damien, Alibart, Fabien

“…Restricted Boltzmann Machines (RBMs) offer a key methodology to implement Deep Learning paradigms. This paper presents a novel approach for realizing a hybrid…”
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SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures by Levisse, A., Giraud, B., Noel, J. P., Moreau, M., Portal, J. M.

“…Passive crossbar memories based on resistive switching bit-cells are today seen as the most promising candidates for flash memories replacement. However,…”
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A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism by Kumbhare, P., Chakraborty, I., Singh, A. K., Chouhan, S., Panwar, N., Ganguly, U.

“…Implementation of a crossbar array of selectorless resistive random access memory (RRAM) devices requires a high nonlinearity (NL) in low resistance state…”
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Real-time tracking based on neuromrophic vision by Hongmin Li, Jing Pei, Guoqi Li

“…Real-time tracking is an important problem in computer vision in which most methods are based on the conventional cameras. Neuromorphic vision is a concept…”
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Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions by Grossi, Alessandro, Zambelli, Cristian, Olivo, Piero, Alvarez-Herault, Jeremy, Mackay, Ken

“…The impact of 500k write cycles on 1kbits TAS-MRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in…”
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Design space exploration of latency and bandwidth in RRAM-based solid state drives by Zuolo, Lorenzo, Zambelli, Cristian, Micheloni, Rino, Bates, Stephen, Olivo, Piero

“…The continuous request for higher storage density in Solid State Drives (SSD) is pushing the NAND-Flash technology to their reliability and performance limits…”
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A ferroelectric-based non-volatile flip-flop for wearable healthcare systems by Izumi, Shintaro, Kawaguchi, Hiroshi, Yoshimoto, Masahiko, Kimura, Hiromitsu, Fuchikami, Takaaki, Marumoto, Kyoji, Fujimori, Yoshikazu

“…The low-power FE-based NVFF is developed by reduction of FE capacitor size. In the proposed NVFF, coupled FE capacitors with complementary data storage are…”
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A new computing rule for neuromorphic engineering by Deng, Lei, Wang, Dong, Li, Guoqi, Zhang, Ziyang, Pei, Jing

“…Neuromorphic engineering has helped to build a brain-inspired intelligent paradigm based on VLSI, and to promise a new application space on smart devices…”
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Graphene oxide and TiO2 nano-particle composite based nonvolatile memory by Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Zhong-Zhen Yu, Rongshan Wei

“…We report a novel resistive random-access memory (RRAM) device with a graphene oxide (GO) composite film embedded with TiO 2 nano-particles as its resistive…”
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Theory study and implementation of configurable ECC on RRAM memory by Mingqing Wang, Ning Deng, Huaqiang Wu, Qian He

“…Resistive random access memory (RRAM) has been recognized as one of the most promising candidates for next generation non-volatile memory due to its simple…”
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Nonvolatile radiation hardened DICE latch by Tingting Pang, Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao

“…Spintronic-based integrated circuits have been widely considered as potential candidates for space application, due to the fact that their core devices (e.g…”
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Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory by Chong Chen, Yiqun Wei, Jianwei Zhao, Xinnan Lin, Zhitang Song

“…The snapback effect of amorphous chalcogenide materials has attracted a wide attention. But the mechanism of ovonic threshold switching is still controversial…”
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STT-RAM read stability in DRAM operating region by Kazama, H., Kawahara, T.

“…Spin-transfer-torque RAM (STT-RAM) is the most promising candidate for replacing DRAM while gaining an additional function of non-volatility. The relationship…”
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Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT:PSS/Ta memristor by Wenqiang Luo, Fang-Yuan Yuan, Huaqiang Wu, Liyang Pan, Ning Deng, Fei Zeng, Rongshan Wei, Xuanjing Cai

“…In this paper, a memristor with structure of Cu/ PEDOT:PSS/ Ta was fabricated at room temperature. The conductance could be modulated incrementally by pulse…”
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The effect of variation on neuromorphic network based on 1T1R memristor array by Peng Yao, Huaqiang Wu, Bin Gao, Guo Zhang, He Qian

“…Memristor is a promising device in neuromorphic computing application by working as the basic element in the synapses array. To overcome the disadvantage (e.g…”
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Influence of selector-introduced compliance current on HfOx RRAM switching operation by Yichen Fang, Yimao Cai, Zongwei Wang, Zhizhen Yu, Xue Yang, Ru Huang

“…The influences of compliance current (CC) introduced by transistor during the forming, set and reset operations on hafnium oxide based RRAM devices are…”
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Realization of neural coding by stochastic switching of magnetic tunnel junction by Deming Zhang, Lang Zeng, Fanghui Gong, Tianqi Gao, Shaolong Gao, Youguang Zhang, Weisheng Zhao

“…In this paper, we present the realization of neural rate coding with probabilistic spike trains by using two back-to-back magnetic tunnel junctions (MTJs) for…”
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SOT-MRAM based on 1Transistor-1MTJ-cell structure by Makarov, Alexander, Windbacher, Thomas, Sverdlov, Viktor, Selberherr, Siegfried

“…We propose a new method of soft magnetic layer switching based on torques generated by the spin Hall effect and show a possibility of building 1Transistor-1MTJ…”
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An electronic synapse based on tantalum oxide material by Xue Yang, Yimao Cai, Zhenxing Zhang, Muxi Yu, Ru Huang

“…An electronic synaptic device with weight modulation and learning function is experimentally demonstrated based on a memristor with Ti/Ta2O5/TaOx/Pt structure,…”
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Nonvolatile multibit SRAM, bit level caching, and multi-context computing for IoT by Yanjun Ma

“…We propose a new memory hierarchy for energy conscious internet of things (IoT) integrated circuits. In this scheme a new type of SRAM cell - hybrid of…”
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