Search Results - "2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems"
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A 28-GHz class-J Power Amplifier with 18-dBm output power and 35% peak PAE in 120-nm SiGe BiCMOS
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…A 28-GHz Power Amplifier (PA) designed in 120-nm SiGe BiCMOS for potential use in mobile millimeter-wave phased arrays is presented in this paper. The core of…”
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A 20GHz VCO and frequency doubler for W-band FMCW radar applications
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper presents a low-noise Colpitts VCO with transformer-based resonator and a 20-to-40GHz frequency doubler for use in 76~77GHz long-range radar and…”
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An X to Ka-Band fully-integrated stacked power amplifier in 45 nm CMOS SOI technology
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…An X to K a -Band fully-integrated power amplifier (PA) designed with 8 stacked transistors is implemented in a 45 nm CMOS SOI technology. The stacked…”
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Modeling and optimization of BiCMOS embedded through-silicon vias for RF-grounding
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…In this paper we demonstrate the modeling and optimization of BiCMOS embedded high aspect ratio through-silicon vias (TSV) for RF-grounding applications. The…”
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A 69-81 GHz power amplifier using 90nm CMOS technology
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA…”
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Novel frequency quadrupler design covering the entire V-Band in 0.13-μm SiGe process
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper presents a novel quadrupler design that adopts the proposed polyphase filter based doubler as the first stage, which generates a differential output…”
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An X-band 6-bit active phase shifter
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper presents a 6-bit active phase shifter using a new vector-sum method for X-band (8-12 GHz) phased arrays in 0.13 μm SiGe BiCMOS process. An RC filter…”
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Stacked Si MOSFET strategies for microwave and Mm-wave power amplifiers
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…In order to increase voltage handling capability of Si digital FETs in power amplifier circuits, an increasingly popular strategy is to use series connections…”
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Non-linear characteristics of passive elements on trap-rich high-resistivity Si substrates
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…RF losses and non-linear behavior of RF passive elements such as coplanar transmission lines and inductors are analyzed. The investigated trap-rich HR-Si…”
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10
Charging mechanisms in nanostructured dielectrics for MEMS capacitive switches
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…The paper investigates the dielectric charging in nanostructured materials already used or potential candidate for insulating films in MEMS capacitive…”
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11
Integrated 60-GHz CMOS variable-gain low-noise amplifier and full 360° phase shifter for phased-array RF receiving system
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper presents a 60-GHz integrated variable-gain low-noise amplifier (VG-LNA) and full 360° phase shifter (PS) circuit, fabricated in 90-nm CMOS process,…”
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12
High linearity 1-ohm RF switches with phase-change materials
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…We report GeTe-based phase change material RF switches with on-state resistance of 1 ohm and ultra-low loss and highest linearity amongst PCM RF switches. The…”
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2.4 GHz / 3.5 GHz dual-band wide-tuning-range quadrature VCO using harmonic-injection coupling technique
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…In this paper, a dual-band wide-tuning-range quadrature VCO (QVCO) using a harmonic-injection coupling technique is proposed. The tuning range of a…”
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A low-power, low-noise, highly-linear receiver for 122 GHz applications in a SiGe BiCMOS technology
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper presents a low power receiver front-end for 122 GHz applications designed in a 0.13μm SiGe:C BiCMOS technology featuring HBTs with fT of 250 GHz and…”
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A TCAD-based roadmap for high-speed SiGe HBTs
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…Results of the 2013 technology roadmap for SiGe HBTs and associated benchmark circuits at mm-wave frequencies are presented. For the first time, the roadmap…”
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An inductorless RC-based quadrature phase generator and its application to vector-sum phase shifter
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…An inductorless quadrature phase generator is designed and implemented in 0.18 μm CMOS technology. The proposed circuit is composed of two resistors, two…”
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K-band differential and quadrature digitally-controlled oscillator designs in SiGe BiCMOS technology
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper presents the design of differential and phase-tunable quadrature K-band digitally-controlled oscillators (DCOs) utilizing a tunable-dielectric…”
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Wideband envelope tracking power amplifiers for wireless communications
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…Envelope tracking (ET) RF power amplifiers are emerging from decades of research as practical approaches for highly efficient, highly linear, broadband power…”
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Low loss 67-GHz coplanar waveguides and spiral inductors on 100 kΩcm gold-doped high resistivity Cz-Silicon
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…In this paper, we demonstrate the ability of deep level doping to reduce the substrate losses in coplanar waveguides and spiral inductors. Room temperature…”
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0.35 dB loss 20 dB coupling directional coupler integrated in 130 nm CMOS SOI technology targeting 3G PA SOC
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the…”
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Conference Proceeding