Search Results - "2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)"

Exploring excitability in graphene for spike processing networks by Shastri, Bhavin J., Nahmias, Mitchell A., Tait, Alexander N., Yue Tian, Fok, Mable P., Chang, Matthew P., Ben Wu, Prucnal, Paul R.

“…We propose a novel excitable laser employing passively Q-switching with a graphene saturable absorber for spike processing networks. Our approach combines the…”
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Modelling the Auger Recombination rates of GaAs(1-x)Bix alloys by Maspero, R., Sweeney, S. J., Florescu, M.

“…We calculate the |Conduction, Heavy Hole (HH)〉 - |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs (1-x) Bi x alloys, which are candidates…”
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Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop by Yuh-Renn Wu, Shu-ting Yeh, Da-Wei Lin, Chi-kang Li, Hao-Chung Kuo, Speck, James S.

“…Our recent preliminary studies show that the nanoscale indium fluctuation in InGaN quantum well LED plays an important key role in carrier transport, radiative…”
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Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes by Chang Sheng Xia, Li, Z. M. Simon, Yang Sheng

“…Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW)…”
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What is the problem with GaN-based VCSELs? by Piprek, Joachim

“…In contrast to the impressive progress of GaN-based edge-emitting lasers in recent years, III-nitride vertical-cavity surface-emitting lasers (VCSELs) still…”
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III-Nitride LED efficiency droop models: A critical status review by Piprek, Joachim

“…GaN- and AlN-based light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Based on different…”
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Design challenges in large-scale silicon photonics by Bogaerts, Wim

“…We discuss the challenges in the design flow of complex silicon photonic circuits. The treatment of multi-physics, variability, parasitics at both layout and…”
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Generalization of the Scharfetter-Gummel scheme by Koprucki, Thomas, Gartner, Klaus

“…For Blakemore-type distribution functions F(η) = 1/(exp(-η)+γ) describing the carrier density in semiconductors a generalization of the classical…”
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Design considerations for large-aperture single-mode oxide-confined VCSELs by Kalosha, V. P., Ledentsov, N. N., Bimberg, D.

“…Three-dimensional cold-cavity optical modes of oxide-confined AlGaAs/GaAs VCSELs at 850 nm were simulated taking into account the material dispersion to study…”
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Theoretical analysis of resonant mode splitting in a single microfiber knot-ring resonator by Jianhui Yu, Shaoshen Jin, Huihui Lu, Furong Huang, Yongchun Zhong, Yunhan Luo, Jun Zhang, Zhe Chen

“…In this paper, we established a theoretical model and made an analysis of single knot-ring resonator by polarization transmission matrix. The theoretical…”
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Dynamic material response of graphene for FDTD simulation of passive modelocking by Mock, Adam

“…The dynamic non-linear material response of graphene is introduced into finite-difference time-domain simulations using a carrier rate equation. Experimental…”
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Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs by Jingjing Wanyan, Zhaoqi Sun, Shiwei Shi, Mingzai Wu, Gang He, Guang Li

“…A visible-blind ultraviolet GaN back-illuminated avalanche photodiode with separate absorption and multiplication regions are simulated based on…”
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Impact of resonator rotational symmetry on infrared metamaterial absorber by Ni, B., Chen, X. S., Ding, J. Y., Li, G. H., Lu, W.

“…We investigate the impact of rotational symmetry of the metamaterial perfect absorber on its performance. The calculated results show that a absorption peak…”
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Terahertz plasmon resonances in GaN and graphene by Lin Wang, Anqi Yu, Xiaoshuang Chen, Weida Hu, Wei Lu

“…The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the…”
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A semi-phenomenological model for the material gain of broadband MQW-SOAs by Motaweh, T., Morel, P., Sharaiha, A., Guegan, M.

“…We propose a semi-phenomenological model to calculate the material gain of multiple quantum well broadband Semiconductor Optical Amplifier (SOA). We show that…”
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Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations by Han-Youl Ryu, Jong-In Shim

“…Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference…”
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Radio-over-fiber DSB-to-SSB conversion using period-one dynamics of semiconductor lasers by Yu-Han Hung, Tzu-Yu Chen, Sheng-Kwang Hwang

“…Direct or external modulation scheme typically adopted in radio-over-fiber systems generates optical double-sideband modulation (DSB) signals. However, due to…”
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Electro-thermal modeling of organic semiconductors describing negative differential resistance induced by self-heating by Glitzky, A., Gartner, K., Fuhrmann, J., Koprucki, T., Fischer, A., Lussem, B., Leo, K., Scholz, R.

“…We discuss self-heating of organic semiconductor devices based on Arrhenius-like conductivity laws. The self-consistent calculation of charge and heat…”
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Numerical analysis and device optimization of radial p-n junction GaAs/AlxGa1−xAs core-shell nanowire solar cells by Lim, Cheng G., Weman, Helge

“…Based on the transfer-matrix method and the complex wave impedance approach, this unified electrical and optical numerical simulation thoroughly analyzes the…”
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Design of a compact tunable wavelength division multiplexing photonic phased array switch using nano electromechanical systems on a silicon-on-insulator integration platform by Hussein, Ali A., Majid, Sawsan A., Hall, Trevor J.

“…We present the design of a novel 4×4 photonic phased array switch element with the capability to actively tune WDM pass-bands. The switch element uses four…”
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