Search Results - "2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)"
-
1
Reduction of lead free solder aging effects using doped SAC alloys
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…The microstructure, mechanical response, and failure behavior of lead free solder joints in electronic assemblies are constantly evolving when exposed to…”
Get full text
Conference Proceeding -
2
Thermal stress induced delamination of through silicon vias in 3-D interconnects
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…In this paper we investigated the interfacial delamination of through silicon via (TSV) structures under thermal cycling or processing. First finite element…”
Get full text
Conference Proceeding -
3
3-D Thin film interposer based on TGV (Through Glass Vias): An alternative to Si-interposer
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…Interposers for SiP will become more and more important for advanced electronic systems. But through substrate vias are essential for the 3-D integration…”
Get full text
Conference Proceeding -
4
TSV manufacturing yield and hidden costs for 3D IC integration
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-01-2010)“…3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via)…”
Get full text
Conference Proceeding -
5
Through-package-via formation and metallization of glass interposers
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-01-2010)“…Interposer technology has evolved from ceramic to organic materials and most recently to silicon. Organic substrates exhibit poor dimensional stability, thus…”
Get full text
Conference Proceeding -
6
Cu/Sn microbumps interconnect for 3D TSV chip stacking
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…The electronics industry is increasingly looking to 3D integration in order to address the ever continuing product needs of miniaturization and performance…”
Get full text
Conference Proceeding -
7
A comparison of thin film polymers for Wafer Level Packaging
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…Polymers are a key building block for all WLP and related technologies like IPD (integrated passives devices) and 3D-SiP (system in Package). A couple of…”
Get full text
Conference Proceeding -
8
IMC bonding for 3D interconnection
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…We performed stacking experiments on Si dies using annular tungsten TSVs (Through Silicon Vias) and Cu studs with low-volume solder micro-bumps. Unlike…”
Get full text
Conference Proceeding -
9
Prognostics using Kalman-Filter models and metrics for risk assessment in BGAs under shock and vibration loads
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…Structural damage to BGA interconnects incurred during vibration testing has been monitored in the pre-failure space using resistance spectroscopy based state…”
Get full text
Conference Proceeding -
10
Terabit/s-class 24-channel bidirectional optical transceiver module based on TSV Si carrier for board-level interconnects
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…We report here on the design, fabrication and characterization of highly-integrated 3-D Optochips consisting of a Si carrier platform with 4 flip-chip attached…”
Get full text
Conference Proceeding -
11
Assembly and reliability characterization of 3D chip stacking with 30μm pitch lead-free solder micro bump interconnection
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…Recently, the three-dimensional chip stacking technology with fine pitch and high input/output interconnects has emerged due to the requirements of…”
Get full text
Conference Proceeding -
12
Fine pitch chip interconnection technology for 3D integration
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-01-2010)“…3D-IC packaging using through silicon via technology has been extensively developed to meet small form factor and low power consumption for next generation…”
Get full text
Conference Proceeding -
13
Studies on electrical performance and thermal stress of a silicon interposer with TSVs
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…The silicon interposer had been desired to have high Input/Output (I/O) counts and fine wirings such as the global wiring of devices. High integration of…”
Get full text
Conference Proceeding -
14
Challenges of Cu wire bonding on low-k/Cu wafers with BOA structures
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…This study describes the development of a Cu wire bond assembly solution for ICs using low dielectric constant (low K) dielectrics and Cu interconnect, with…”
Get full text
Conference Proceeding -
15
Full characterization of Cu/Cu direct bonding for 3D integration
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…This paper presents the latest results on electrical characterization of wafer to wafer structures made by direct copper bonding. The bonding was achieved at…”
Get full text
Conference Proceeding -
16
Slow wave and dielectric quasi-TEM modes of Metal-Insulator-Semiconductor (MIS) structure Through Silicon Via (TSV) in signal propagation and power delivery in 3D chip package
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…The effects of slow wave and dielectric quasi-TEM modes due to MIS (Metal-Insulator-Semiconductor) structure TSV (Through-Silicon-Via) are analyzed by using…”
Get full text
Conference Proceeding -
17
Effects of fine size lead-free solder ball on the interfacial reactions and joint reliability
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…As the trend of smaller mobile electronic products, smaller solder balls are needed for electronic packages such as chip scale package (CSP). The purpose of…”
Get full text
Conference Proceeding -
18
CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput…”
Get full text
Conference Proceeding -
19
Low temperature PECVD of dielectric films for TSV applications
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-01-2010)“…The effects of a novel, low-temperature (<; 200 °C) PECVD TEOS SiO process on via step coverage and blanket film electrical performance are investigated and…”
Get full text
Conference Proceeding -
20
Flip-chip integrated silicon photonic bridge chips for sub-picojoule per bit optical links
Published in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) (01-06-2010)“…Silicon photonics holds tremendous promise as an energy and bandwidth efficient interconnect technology for chip-to-chip and within-chip communications in…”
Get full text
Conference Proceeding