Search Results - "2008 International Conference on Simulation of Semiconductor Processes and Devices"
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Analytical model for point and line tunneling in a tunnel field-effect transistor
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…The tunnel field-effect transistor (TFET) is a promising candidate for the succession of the MOSFET at nanometer dimensions. In general, the TFET current can…”
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Conference Proceeding
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A surface potential based poly-Si TFT model for circuit simulation
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We have developed a compact model of poly-Si TFTs based on complete surface-potential descriptions, including carrier trapping. The model was shown to be…”
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Conference Proceeding -
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Phase-change memory simulations using an analytical phase space model
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…In this paper, an analytical phase transition model is coupled self-consistently with the electro-thermal transport model. The phase space model and the…”
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Conference Proceeding -
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Unusually strong temperature dependence of graphene electron mobility
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We report unusually strong temperature dependence of graphene electron mobility, obtained using full-band Monte Carlo (MC) simulations and experiment. The…”
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Conference Proceeding -
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Statistical analysis of random telegraph noise in CMOS image sensors
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We propose a statistical method to predict the dark random readout noise in CMOS image sensors. First, we calculate the dark random noise originated from oxide…”
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Conference Proceeding -
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Study of stress effect on replacement gate technology with compressive stress liner and eSiGe for pFETs
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…The stress effect at the channel region of pFETs with compressive stress liner (c-SL) and eSiGe using replacement gate technology is firstly investigated in…”
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Conference Proceeding -
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Three-dimensional topography simulation using advanced level set and ray tracing methods
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We present new techniques for three-dimensional topography simulation of processes for which ballistic transport can be assumed at feature-scale. The…”
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Conference Proceeding -
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Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of…”
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Conference Proceeding -
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Wigner Monte Carlo approach to quantum transport in nanodevices
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…The Wigner Monte Carlo approach is shown to provide an efficient way to study quantum transport in the presence of scattering and to connect semi-classical to…”
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Conference Proceeding -
10
Simulation of field-effect Biosensors (BioFETs)
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…In this paper a bottom-up approach for modeling field-effect biosensors (BioFETs) is developed. Starting from the given positions of charged atoms, of a given…”
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Conference Proceeding -
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Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green's function formalism
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…A high-k-metal-gate stack has been investigated using an open boundary model based on the non-equilibrium Greenpsilas function formalism. The numerical energy…”
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Conference Proceeding -
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Band-engineering of novel channel materials for high performance nanoscale MOSFETs
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…In order to continue the scaling of silicon-based CMOS and maintain the historic progress in information processing and transmission, innovative device…”
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Conference Proceeding -
13
Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…SiC MOSFETs suffer from an excessively high density of interface traps. Here, we present physical models to quantify the effect of quantum confinement in the…”
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Conference Proceeding -
14
Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…In this work, a new efficient simulation method with comprehensive physical models is developed to evaluate the performance of CTM at various biases,…”
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Conference Proceeding -
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Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…Physics-based simulations are widely recognized as an helpful support to develop novel transistor structures. In this paper we describe a two-dimensional…”
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Conference Proceeding -
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Progress in biosensor and bioelectronics simulations: New applications for TCAD
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…Scaling of devices in the semiconductor industry has reached an extremely impressive level; electronic device dimensions are approaching atomic scales and can…”
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Conference Proceeding -
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A deterministic Boltzmann equation solver for two-dimensional semiconductor devices
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We have developed a Boltzmann equation solver for two-dimensional (2D) semiconductor devices based on the spherical harmonics expansion and the maximum entropy…”
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Conference Proceeding -
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Synthetic soft error rate simulation considering neutron-induced single event transient from transistor to LSI-chip level
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…Soft error phenomena induced by the Sea-level cosmic neutron have been investigated by using a simulation system that covers from an individual MOSFET device…”
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Conference Proceeding -
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Coupling of non-equilibrium Green's function and Wigner function approaches
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We propose a coupling scheme, where the advantages of the coherent Greenpsilas function formalism are combined with the ability of the Wigner formalism to…”
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Conference Proceeding -
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Impact of inhomogeneous strain on the valence band structures of Ge-Si core-shell nanowires
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2008)“…We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account…”
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Conference Proceeding