Search Results - "2008 Conference on Optoelectronic and Microelectronic Materials and Devices"

Advanced upconverter systems with spectral and geometric concentration for high upconversion efficiencies by Goldschmidt, J.C., Loper, P., Fischer, S., Janz, S., Peters, M., Glunz, S.W., Willeke, G., Lifshitz, E., Kramer, K., Biner, D.

“…In this paper we present an advanced upconverter system concept to reduce the sub-bandgap losses of silicon solar cells. We address the issue of the narrow…”
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Reliability of GaN-Based HEMT devices by Menozzi, R.

“…This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this…”
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Current mechanisms in n-SiC/p-Si heterojunctions by Tanner, P., Dimitrijev, S., Harrison, H.B.

“…Current-voltage characteristics of 3C-SiC/Si heterojunction diodes are presented with reverse breakdown voltage exceeding 200 V, leakage current of 1.3 mAcm -2…”
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MEMS-based tunable Fabry-Perot filters on silicon substrates by Milne, J.S., Keating, A.J., Dell, J.M., Faraone, L.

“…A wavelength-tunable bandpass optical filter based on a Fabry-Perot cavity combined with a micro-actuator has been designed and fabricated, with an emphasis on…”
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Effect of heat treatment on internal stresses in PECVD SiNxHy thin films by Yimeng Yang, Yinong Liu, Dell, J.M.

“…This study investigated the effect of low-temperature heating on internal stresses of SiNx thin films prepared by plasma enhanced chemical vapour deposition…”
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Study of silicon quantum dot p-n or p-i-n junction devices on c-Si substrate by Sangwook Park, Eunchel Cho, Xiaojing Hao, Conibeer, G., Green, M.A.

“…The tandem stack of cells is one of the promising approaches for using a full solar spectrum and improving solar cell performance. By restricting the…”
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Low cost nanoimprinted polymer waveguides by Ting Han, Madden, S., Zhang, M., Charters, R., Luther-Davies, B.

“…We report here on the use of nanoimprint technology to fabricate low cost planar waveguides in a Polysiloxane polymer system capable of passing the stringent…”
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Doping dependence of optical properties of solid-phase crystallized evaporated poly-Si thin films on glass by Song He, Sproul, A.B., Aberle, A.G.

“…Boron and phosphorus doped polycrystalline silicon films with moderate and heavy doping of ~5times10 17 cm -3 and ~1times10 19 cm -3 respectively are…”
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Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects by Tartarin, J.G., Astre, G., Bary, L., Chevallier, J., Delage, S.

“…GaN related devices have demonstrated excellent performances for high power, high temperature up to X-band applications. However, even if the reliability…”
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SEM analysis and selenization of Cu-Zn-Sn sequential films produced by evaporation of metals by Volobujeva, O., Mellikov, E., Raudoja, J., Grossberg, M., Bereznev, S., Altosaar, M., Traksmaa, R.

“…The formation of Cu 2 SnZnSe 4 thin films in the selenization of different sequential metallic and alloy films is investigated. It is shown that the main…”
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Self-mixing displacement sensing using the junction voltage variation in a GaN laser by Kliese, R., Yah Leng Lim, Bertling, K., Bakar, A.A.A., Bosch, T., Rakic, A.D.

“…The self-mixing (SM) laser sensing technique allows a simple, self-aligned and robust system for measuring displacement. Low-cost blue emitting GaN laser…”
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Device fabrication scheme for evaporated SPC poly-Si thin-film solar cells on glass (EVA) by Kunz, O., Zi Ouyang, Wong, J., Aberle, A.G.

“…Polycrystalline silicon thin-film solar cells on glass obtained by solid phase crystallisation (SPC) of PECVD-deposited a-Si have good photovoltaic efficiency…”
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Anomalous transport in ferromagnetic GaAs/InxGa1-xAs/GaAs quantum well delta-doped with Mn and C by Kulbachinskii, V., Shchurova, L., Kuznetsov, N.

“…Transport, magnetotransport and magnetic properties of structures with GaAs/In 0.17 Ga 0.83 As/GaAs quantum well (QW) in GaAs have been measured in the…”
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The paradox of compensated silicon by Cuevas, A.

“…Compensated doping is typical of upgraded metallurgical silicon. The relatively low carrier mobility associated to high concentrations of both acceptors and…”
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Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water by Hsueh, T.H., Lai, W.C., Yeh, C.Y., Sheu, J.K., Peng, L.C., Chang, K.H., Wu, S.E., Liu, C.P., Gault, B., Ringer, S.P.

“…Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted…”
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Reducing breakdown voltages in impact ionization Metal-Oxide-Semiconductor (I-MOS) devices using hetero structure by Nematian, H., Fathipour, M.

“…In order to decrease bias voltages in IMOS devices we have proposed a new IMOS structure with Si/Si-Ge channel in this paper. In comparison with previously…”
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Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication by Niebelschutz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Bruckner, K., Hein, M., Ambacher, O., Schober, A.

“…We present an isotropic fluorine based process to etch 4H-SiC substrates compatible with standard metallic etch masks and reasonable etching rates…”
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Plasma dry etching for selective emitter formation in crystalline silicon based solar cell by Tucci, M., Serenelli, L., Del Bono, A., Izzi, M., Pirozzi, L., Martufi, P., Sanseverino, A.

“…Selective emitter formation in silicon based solar cell is recently becoming a common technique to enhance the blue response of solar cell. In this work, we…”
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Enhanced ultraviolet photo-response of nanostructure zinc oxide (ZnO) thin film irradiated with pulsed laser by Gupta, V., Menon, R., Sreenivas, K.

“…Ultravoilet (UV) photodetectors have been fabricated by rf magnetron sputtered ZnO films. The average grain size of ZnO films were 15-20 nm. Photo-response (I…”
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Fabrication of textured silicon solar cell using microlens as anti-reflection layer by Hye Jin Nam, Soon Cheol Jeong, Duk-Young Jung, Young Kuk Kim, Kyu Min Han, JunSin Yi

“…This paper presents facile, reproducible soft-lithographic technique for fabricating textured crystalline silicon solar cell with hexagonally close-packed…”
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