Search Results - "2002 Electrical Overstress/Electrostatic Discharge Symposium"
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High frequency instabilities in GMR heads due to metal-to-metal contact ESD transients
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Utilizing a D-CDM (Direct Charged Device Model) ESD tester this study evaluates the failure rates of GMR heads by measuring high frequency instability noise…”
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A novel on-chip ESD protection circuit for GaAs HBT RF power amplifiers
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…A low capacitance, on-chip Electrostatic Discharge (ESD) protection circuit for GaAs power amplifiers that does not degrade RF circuit performance is…”
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A study of high current characteristics of devices in a 0.13µm CMOS technology
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…This paper evaluates the high current performance of several devices in 0.13µm CMOS process as function of layout parameters using transmission line pulse…”
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The impact of substrate resistivity on ESD protection devices
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…The substrate resistivity has a serious impact on the behaviour of ESD protection devices. TLP characterisation and failure analysis show that different…”
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Variable-trigger voltage ESD Power Clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) Silicon Germanium Heterojunction Bipolar Transistor with Carbon incorporation
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…A novel ESD Power Clamps for 40 GHz applications, using a 120 GHz/100 GHz f T /f MAX Silicon Germanium Heterojunction Bipolar Transistor (HBT) with Carbon…”
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6
Sources of impulsive EMI in large server farms
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Further research is reported on EMI in large server installations.[1] Data is presented from both staged events and server environments. The data confirms the…”
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ESD damage by arcing near GMR heads
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…This paper reports the ESD damage of GMR heads in gold ball bonding process (GBB), which utilizes a high voltage arc to form a gold ball, then ultrasonically…”
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Effects of ESD transients on the properties of GMR heads
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Simulated ESD transients with pulsewidths from 0.1 nsec to 10 nsec were applied to GMR heads. From 1 to 10 nsec essentially no changes in failure voltages are…”
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Copper interconnect microanalysis and electromigration reliability performance due to the impact of TLP ESD
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Electrostatic discharge events can degrade the electromigration (EM) reliability of devices. Transmission Line Pulsing (TLP) is used to simulate such an…”
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10
New considerations for MOSFET power clamps
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Two ESD clamp circuit design techniques have been developed to reduce cell size and to combat the effects of gate leakage that have become significant in…”
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Magnetoresistive Sensitivity Mapping (MSM) and dynamic electrical test (DET) correlation study on GMR sensor induced by low threshold ESD stress
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…In the case of soft ESD damage, the GMR read sensor was magnetically changed caused by ESD stress. With magnetoresistive sens itivity mapping (MSM), which is…”
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12
Modelling and extraction of RF performance parameters of CMOS Electrostatic Discharge protection devices
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…The HF parasitic behaviour of two terminal, CMOS Electrostatic Discharge (ESD) protection devices is studied. Basic small signal RC equivalent models and…”
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13
Optimization of input protection diode for high speed applications
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Optimization of input protection diodes for high-speed applications including RF and Internet receivers is examined. The key parameters used to rate the diodes…”
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14
New ESD protection circuits based on PNP triggering SCR for advanced CMOS device applications
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…New silicon controlled rectifier (SCR) structures for ESD protection circuits, with low parasitic capacitance, are proposed. These new SCR structures are…”
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An automated electrostatic discharge computer-aided design system with the incorporation of hierarchical parameterized cells in BiCMOS analog and RF technology for mixed signal applications
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…Development of an automated ESD design system for analog and Radio Frequency (RF) technologies using a hierarchy of RF-characterized higher order graphical…”
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A 6mW, 1.5dB NF CMOS LNA for GPS with 3kV HBM ESD-protection
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…This paper describes the design of a high performance 0.25µm CMOS Low Noise Amplifier (LNA) for the Global Positioning System (GPS) operating at 1.57GHz. The…”
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17
ESD in magnetic recording
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18
Investigation for a Smart Power and self-protected device under ESD stress through geometry and design considerations for automotive applications
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…This paper deals with a detailed study of the ESD capability of self-protected LDMOS used for automotive applications. Failure mechanisms of LDMOS devices…”
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High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…This paper presents a novel SCR for power line and local I/O ESD protection. The HHI-SCR exhibits a dual ESD clamp characteristic: low-current high-voltage…”
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Technology CAD evaluation of BiCMOS protection structures operation including spatial thermal runaway
Published in 2002 Electrical Overstress/Electrostatic Discharge Symposium (01-10-2002)“…A 2-D simulation approach that takes into account the 3D effects of electro-thermal instability during ESD operation, is presented. The method is used to…”
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