Search Results - "1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings"

Characteristics of 0.1 /spl mu/m Si MOSFETs with ISRC (Inverted-Sidewall Recessed-Channel) structure for reduced short channel effect by Jeongho Lyu, Youngjin Choi, Yeong Taek Lee, Byung-Gook Park, Kukjin Chun, Jong Duk Lee

“…To solve the problems of trade-off between the short channel effect and the performance enhancement of sub-quarter-micrometer MOSFETs, we have fabricated a 0.1…”
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Solid-phase epitaxy of Al/sub x/Ga/sub (1-x/)As: kinetics as a function of composition by Hogg, S.M., Llewellyn, D.J., Tan, H.H., Ridgway, M.C.

“…The solid-phase epitaxy (SPE) of amorphised Al/sub x/Ga/sub (1-x/)As alloys, with x=0-0.46, has been investigated at temperatures over the range 220-310/spl…”
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Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation by Ridgway, M.C., Byrne, A.P., Bezakova, E., Wehner, M., Vianden, R.

“…InP substrates were implanted with /sup 120/Sn, /sup 115/In and/or /sup 31/P ions and thereafter, with trace amounts of radioactive /sup 111/In ions. Following…”
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Investigation of the role of Ni in forming ultra-low resistance Ni-Ge-Au ohmic contacts to n/sup +/ GaAs by Lumpkin, N.E., Lumpkin, G.R.

“…Nickel is commonly thought to act as a wetting agent in alloyed Au-Ge ohmic contacts for GaAs-based devices. However work on the optimisation of ohmic contacts…”
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Design of quantum well materials for maximum change in refractive index with minimal loss by Mitchell, A., Goldys, E.M., Austin, M.W., Nott, G.J.

“…Quantum well material have become attractive materials for integrated optic devices. Most modulator devices based on quantum well materials utilise the…”
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TiO/sub 2/ thin films prepared by sol-gel method for oxygen microsensor application by Atashbar, M.Z., Sun, H.T., Wlodarski, W.

“…Polycrystalline TiO/sub 2/ thin films have been prepared via a sol-gel method. The film morphology, crystalline phase and chemical composition have been…”
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Preparation of In/sub 2/O/sub 3/ thin films by sol-gel process for ozone sensing by Jimenez, C., Sun, H.T., Wlodarski, W.

“…In/sub 2/O/sub 3/ thin films on sapphire substrates have been prepared from indium isopropoxide solutions by sol-gel process. Highly sensitive films have been…”
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Sol-gel derived WO/sub 3/ coatings on Ti:LiNbO/sub 3/ optical waveguide for gas sensing by Chen, Z.H., Ma, X., Sun, H.T., Wlodarski, W., Austin, M.

“…WO/sub 3/ coatings on Ti:LiNbO/sub 3/ optical waveguides have been prepared from tungsten ethoxide by a sol-gel method. The annealed coatings display a…”
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Optical properties of /spl delta/-doped GaAs nipi super-lattices by Johnston, M.B., Gal, M., Li, G., Jagadish, C.

“…A /spl delta/-doped GaAs nipi super-lattice has been examined using photoluminescence spectroscopy. Intensity dependent photoluminescence spectra were measured…”
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Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures by Siliquini, J.F., Xu, M.G., Umana Membreno, G.A., Clark, A., Dell, J.M.

“…A review of methods measuring the electric-field-dependent absorption coefficient in quantum confined structures is presented. The methods proposed are based…”
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The effect of irradiation temperature on post-irradiation strain levels in Ge/sub x/Si/sub 1-x//Si strained layer heterostructures by Glasko, J.M., Zou, J., Cockayne, D.J.H., FitzGerald, J., Elliman, R.G.

“…Double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used…”
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Electrical properties of nitrided SiO/sub 2/ on 6H-SiC by RTP by Hui-feng Li, Dimitrijev, S., Harrison, H.B., Sweatman, D.

“…This paper presents the results of the effect of NO and N/sub 2/O annealing on the electrical characteristics of SiO/sub 2/ grown on the Si-faced n- and p-type…”
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Recent progress in /spl delta/-doped compound semiconductors by Li, G., Jagadish, C.

“…We report recent progress in growth of /spl delta/-doped compound semiconductors by metal organic vapour phase epitaxy (MOVPE). The limiting processes are…”
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Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n/sup +/GaAs Schottky diodes by Arifin, P., Tansley, T.L., Goldys, E.M.

“…We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n/sup +/GaAs Schottky diodes through their I-V characteristics as a function of…”
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Temperature dependent noise performance of Hg/sub 1-x/Cd/sub x/Te photoconductive detectors by Musca, C.G., Siliquini, J.F., Smith, E.P.G., Nener, B.D., Faraone, L.

“…Background limited infrared photodetector (BLIP) performance, attained at cryogenic temperatures, is the maximum performance achievable by a photoconductive…”
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High-efficiency high-speed Ga/sub 1-x/Al/sub x/As light-emitting diode characteristics by Tingting Zhang, Sugeta, T., Takemura, M., Edwards, P.J., Cheung, W.N., Lynam, P.

“…We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The…”
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Low temperature preparation of the SiO/sub 2/ films with low interface trap density using ECR diffusion and ECR CVD method by Bup-Ju Jeon, Il-Hyun Jung, In-Hwan Oh, Tae-Hoon Lim

“…Silicon oxide films were grown by Electron Cyclotron Resonance (ECR) diffusion and the ECR CVD method at low temperature. An MOS capacitor with 250 /spl Aring/…”
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Slow trap profiling-a new technique for characterising slow traps in MOS dielectrics by Tanner, P.G., Dimitrijev, S., Harrison, H.B.

“…The authors present a new technique for characterising slow traps in MOS structures which has several important advantages over existing measurement…”
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Determination of recombination parameters in semiconductors from photoconductance measurements by Cuevas, A., Sinton, R.A., Stuckings, M.

“…The possibility of obtaining minority carrier lifetimes and emitter recombination currents from quasi-steady photoconductance measurements of the effective…”
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Analysis of intermodulation nulling in HEMTs by Guoli Qu, Parker, A.E.

“…This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation…”
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