Search Results - "1966 International Electron Devices Meeting"

Multiple signal operation of a TWT by Giarola, A.J.

“…Due to their wide operating frequency band (almost an octave), traveling wave tubes have become very attractive for use in multiple-access communication…”
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Micropower devices for integrated circuits by Stehlin, R., Bohannon, R.

“…This paper describes the development of devices necessary for the design of micropower integrated circuits. These devices were used specifically for…”
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Three dimensional analysis of integrated circuit resistors by Guerena, J.A., Lindholm, F.A.

“…In integrated-circuit resistors current never flows unidirectionally. Indeed, for many integrated-circuit resistors three spatial coordinates are needed to…”
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Advancements in traveling-wave tube efficiency with combined voltage jump, velocity, tapers and enhanced beam bunching by Sauseng, O.G., Ernstoff, M.N.

“…Efficiency studies on a demoumtable traveling-wave tube are described. With the application of new efficiency enhancement techniques, it was possible to…”
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Gallium arsenide electro-optic modulator for the 10.6-micron CO2laser by Walsh, T.E.

“…A gallium arsenide electro-optic modulator has been used for external modulation of the output of a CO 2 laser at 10.6 microns. Modulation depths of 70% have…”
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A PPM focused high power CW TWT for Ku-band by Otsuka, S.P., Espinosa, R.J.

“…A light-weight traveling-wave tube designed to deliver 100 watts of CW power at 30 db saturated gain over the complete Ku-Band, will be described. Features of…”
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Forward voltage distribution in p-n-p-n by Kokosa, R.A., Davies, R.L.

“…The SCR conduction state has been analyzed in the literature both from a circuit and device parameter approach. Often where device design parameters were used,…”
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An X-band forward wave DC operated crossed-field amplifier by Feulner, F.A., Sussman, S.S.

“…An X-band, dc operated, forward wave, crossed-field amplifier has been developed utilizing a helix coupled vane structure as the slow wave circuit. The…”
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Fast trigger tubes for switching megawatts in nano-seconds by Creveling, R.

“…Two types of tubes have been developed which depend upon an electrical discharge in gas at low pressure. The tubes are of rugged construction which will…”
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A silicon nitride junction seal on silicon planar transistors by Schneer, G.H., vanGelder, W., Hauser, V.E., Schmidt, P.F.

“…This paper describes the fabrication, the electrical characteristics, and the aging behavior of silicon planar transistors with silicon nitride as a junction…”
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Very thin techniques (VTT) for dielectrically isolated MIS devices by McWilliams, D.

“…MOS multilplex switches have been made in Czochralski silicon down to 2 microns thick. These dielectrically isolated devices exhibit electrical characteristics…”
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A multi-kilowatt TWT for millimeter waves by Owens, O.G., Forster, D.C.

“…This paper is concerned with new and substantial increase in available cw power levels at millimeter-wave frequencies. Average power in excess of five…”
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Space-charge-limited hole and electron currents in germanium by Shumka, A.

“…Properties associated with space-charge-limited (SCL) currents in solids are summarized in terms of their potential for device application. The effect of…”
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The planar distributed function generator by Post, P.B.

“…The planar distributed function generator (PDFG) is a new type of analog computing element based on monolithic integral circuit techniques. It can be designed…”
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Electron beam scanlaser by Myers, R.A., Pole, R.V.

“…This paper reports en experimental studies of the Electron Beam Scanlaser, a scanning laser device in which the transverse position of focused laser light is…”
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Precision gain and phase matching of low-noise traveling-wave amplifiers by Frost, R.D.

“…A highly-refined group of low-noise traveling-wave amplifiers has been developed for use in a monopulse tracking system for the Apollo program. A total of 36…”
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CcCompensated transistors by Haines, G.W.

“…A device fabrication is presented which enables the gain band-width product realized in a differential amplifier topology to increase as much as five times…”
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Computer-aided simulation of transistor fabrication, characterization, and optimization by Ghosh, H.N., de la Moneda, F.H., Dono, N.R.

“…A systematic and general method of computing ac and dc characteristics of double-diffused junction transistors is described using major process parameters such…”
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Lithium-doped radiation resistant silicon solar cells by Wysocki, J.J.

“…It is well known that impurities in silicon interact with radiation-induced vacancies to produce complexes which are stable at room temperature. For example,…”
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Noise in injected-beam crossed-field electron devices by Lele, S.G., Rowe, J.E.

“…The purpose of this paper is to present some theoretical and experimental results on noise transport in crossed-field devices which utilize Kino type electron…”
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