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  1. 1

    Piezoelectric Al1−xScxN thin films: A semiconductor compatible solution for mechanical energy harvesting and sensors by Matloub, R., Hadad, M., Mazzalai, A., Chidambaram, N., Moulard, G., Sandu, C. S., . Metzger, Th, Muralt, P.

    Published in Applied physics letters (15-04-2013)
    “…The transverse piezoelectric coefficient e31,f of Al1-xScxN thin films was investigated as a function of composition. It increased nearly 50% from x = 0 to x =…”
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    Journal Article
  2. 2

    Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy by Wang, L, Rastelli, A, Kiravittaya, S, Songmuang, R, Schmidt, OG, Krause, B, Metzger, TH

    Published in Nanoscale research letters (26-07-2006)
    “…We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs,…”
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    Journal Article
  3. 3

    Three-dimensional high-resolution quantitative microscopy of extended crystals by Godard, P., Carbone, G., Allain, M., Mastropietro, F., Chen, G., Capello, L., Diaz, A., Metzger, T.H., Stangl, J., Chamard, V.

    Published in Nature communications (29-11-2011)
    “…Hard X-ray lens-less microscopy raises hopes for a non-invasive quantitative imaging, capable of achieving the extreme resolving power demands of nanoscience…”
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    Journal Article
  4. 4

    Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots by Kegel, I, I, Metzger, TH, Lorke, A, Peisl, J, Stangl, J, Bauer, G, Garcia, JM, Petroff, PM

    Published in Physical review letters (21-08-2000)
    “…Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the…”
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    Journal Article
  5. 5

    Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer by Schülli, T U, Stangl, J, Zhong, Z, Lechner, R T, Sztucki, M, Metzger, T H, Bauer, G

    Published in Physical review letters (14-02-2003)
    “…Anomalous x-ray scattering is employed for quantitative measurements of the Ge composition profile in islands on Si(001). The anomalous effect in SiGe is…”
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    Journal Article
  6. 6

    In situ three-dimensional reciprocal-space mapping during mechanical deformation by Cornelius, T. W., Davydok, A., Jacques, V. L. R., Grifone, R., Schülli, T., Richard, M.-I., Beutier, G., Verdier, M., Metzger, T. H., Pietsch, U., Thomas, O.

    Published in Journal of synchrotron radiation (01-09-2012)
    “…Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X‐ray…”
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    Journal Article
  7. 7

    Ordered Micro/Mesoporous Composite Prepared as Thin Films by Petkov, N, Hölzl, M, Metzger, T. H, Mintova, S, Bein, T

    Published in The journal of physical chemistry. B (17-03-2005)
    “…A new synthesis method for preparation of thin films and powders consisting of zeolite beta nanocrystals embedded in ordered mesoporous silica matrix is…”
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    Journal Article
  8. 8

    Temperature influence on the production of nanodot patterns by ion beam sputtering of Si(001) by Gago, R., Vázquez, L., Plantevin, O., Sánchez-García, J. A., Varela, M., Ballesteros, M. C., Albella, J. M., Metzger, T. H.

    “…The temperature influence (T=300–625 K) on the production of nanodot patterns by 1 keV Ar+ ion beam sputtering (IBS) of Si(001) is addressed. The surface…”
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    Journal Article
  9. 9

    Three-dimensional diffraction mapping by tuning the X-ray energy by Cornelius, T. W., Carbone, D., Jacques, V. L. R., Schülli, T. U., Metzger, T. H.

    Published in Journal of synchrotron radiation (01-05-2011)
    “…Three‐dimensional reciprocal‐space maps of a single SiGe island around the Si(004) Bragg peak are recorded using an energy‐tuning technique with a microfocused…”
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    Journal Article
  10. 10

    Local structure of a rolled-up single crystal: an X-ray microdiffraction study of individual semiconductor nanotubes by Krause, B, Mocuta, C, Metzger, T H, Deneke, Ch, Schmidt, O G

    Published in Physical review letters (28-04-2006)
    “…Crystals with cylindrical symmetry, not existing in nature, are mimicked by the roll-up of single-crystalline and highly strained semiconductor bilayers…”
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    Journal Article
  11. 11

    Shape, strain, and ordering of lateral InAs quantum dot molecules by KRAUSE, B, METZGER, T. H, RASTELLI, A, SONGMUANG, R, KIRAVITTAYA, S, SCHMIDT, O. G

    “…The results of an x-ray study on freestanding, self-assembled InAs/GaAs quantum dots grown by molecular beam epitaxy are presented. The studied samples cover…”
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    Journal Article
  12. 12

    X-ray study of atomic ordering in self-assembled Ge islands grown on Si(001) by MALACHIAS, A, SCHÜLLI, T. U, MEDEIROS-RIBEIRO, G, CANCADO, L. G, STOFFEL, M, SCHMIDT, O. G, METZGER, T. H, MAGALHAES-PANIAGO, R

    “…X-ray diffuse scattering in the vicinity of basis-forbidden Bragg reflections were measured for samples with uncapped self-assembled Ge islands epitaxially…”
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    Journal Article
  13. 13

    Application of X-ray scattering technique to the study of supersmooth surfaces by Asadchikov, V.E., Kozhevnikov, I.V., Krivonosov, Yu.S., Mercier, R., Metzger, T.H., Morawe, C., Ziegler, E.

    “…Applications of the X-ray scattering technique for studying supersmooth surfaces with rms roughness of 0.1–0.2nm are discussed. The experimental schemes are…”
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    Journal Article
  14. 14

    Al(1−x)Sc(x)N thin films as promising non-ferroelectric materials for energy harvesting by Matloub, R., Hadad, M., Sandu, C. S., Chidambaram, N., Mazzalai, A., Muralt, P., Moulard, G., Metzger, Th

    “…We report on microstructure evolution and enhancement of longitudinal and transverse piezoelectric responses of AlN thin film with partial substitution of Al…”
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    Conference Proceeding
  15. 15

    Strain distribution in nitride quantum dot multilayers by Chamard, V., Schülli, T, Sztucki, M., Metzger, T. H., Sarigiannidou, E., Rouvière, J.-L., Tolan, M., Adelmann, C., Daudin, B.

    “…Nitride quantum dots (QD’s) grown in the wurtzite phase present a strong vertical ordering along the (0001) direction when they are stacked in multilayers…”
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    Journal Article
  16. 16

    Strain and composition distribution in uncapped SiGe islands from x-ray diffraction by Stangl, J., Daniel, A., Holý, V., Roch, T., Bauer, G., Kegel, I., Metzger, T. H., Wiebach, Th, Schmidt, O. G., Eberl, K.

    Published in Applied physics letters (03-09-2001)
    “…We have investigated the strain and composition distribution in uncapped SiGe islands grown on Si (001) by x-ray diffraction. In order to be sensitive to the…”
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    Journal Article
  17. 17

    Silicalite-1/polymer films with low-k dielectric constants by Larlus, O., Mintova, S., Valtchev, V., Jean, B., Metzger, T.H., Bein, T.

    Published in Applied surface science (15-03-2004)
    “…Two-component films including nanosized silicalite-1 zeolite and acryl latex were deposited on silicon wafers via spin-coating approach. The first stage of the…”
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    Journal Article Conference Proceeding
  18. 18

    Strain analysis by inversion of coherent Bragg X-ray diffraction intensity: the illumination problem by Chamard, V., Dollé, M., Baldinozzi, G., Livet, F., de Boissieu, M., Labat, S., Picca, F., Mocuta, C., Donnadieu, P., Metzger, T.H.

    Published in Journal of modern optics (20-05-2010)
    “…Bragg coherent X-ray diffraction imaging is demonstrated with a micro-focused illumination. The 2D projected density of the 3D nano-crystal is successfully…”
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    Journal Article
  19. 19

    Anomalous x-ray diffraction on InAs/GaAs quantum dot systems by Schülli, T. U., Sztucki, M., Chamard, V., Metzger, T. H., Schuh, D.

    Published in Applied physics letters (15-07-2002)
    “…Free-standing InAs quantum dots on a GaAs (001) substrate have been investigated using grazing incidence x-ray diffraction. To suppress the strong scattering…”
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    Journal Article
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