Search Results - "Żuk, Jerzy"

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    Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing by Prucnal, Slawomir, Żuk, Jerzy, Hübner, René, Duan, Juanmei, Wang, Mao, Pyszniak, Krzysztof, Drozdziel, Andrzej, Turek, Marcin, Zhou, Shengqiang

    Published in Materials (20-03-2020)
    “…Controlled doping with an effective carrier concentration higher than 10 cm is a key challenge for the full integration of Ge into silicon-based technology…”
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    Journal Article
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    Characterization of uranium(VI) sorption by organobentonite by Majdan, Marek, Pikus, Stanisław, Gajowiak, Agnieszka, Gładysz-Płaska, Agnieszka, Krzyżanowska, Halina, Żuk, Jerzy, Bujacka, Monika

    Published in Applied surface science (15-06-2010)
    “…The U(VI) sorption on the bentonite modified by hexadecyltrimethylammonium bromide (HDTMA) was studied in the concentration range: 0.0001–0.001 mol/dm 3 in the…”
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    Journal Article Conference Proceeding
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    Sensitization of the Blue-green Electroluminescence by Gadolinium Coupled to Si Nanocluster Embedded in a SiO2 Matrix by PRUCNAL, Slawomir, REBOHLE, Lars, SUN, JM, SKORUPA, Wolfgang, DROŹDZIEL, Andrzej, PYSZNIAK, Krzysztof, Turek, Marcin, FILIKS, Janusz, ŻUK, Jerzy

    Published in Medžiagotyra (01-01-2013)
    “…In this work an enhancement of the blue and green electroluminescence (EL) related to silicon inclusions into SiO2 layer by gadolinium co-doping was…”
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    Journal Article
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    Structure and optical properties of SiO2 films with ZnSe nanocrystals formed by ion implantation by Makhavikou, Maksim, Komarov, Fadei, Parkhomenko, Irina, Vlasukova, Liudmila, Milchanin, Oleg, Żuk, Jerzy, Wendler, Elke, Romanov, Ivan, Korolik, Olga, Togambayeva, Altynai

    Published in Surface & coatings technology (25-06-2018)
    “…ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn+ and Se+ ions at 500 °C. After implantation…”
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    Journal Article
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    Editorial by Żuk, Jerzy

    Published in Vacuum (01-05-2009)
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    Journal Article
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    Reprint of “Structure and optical properties of SiO2 films with ZnSe nanocrystals formed by ion implantation” by Makhavikou, Maksim, Komarov, Fadei, Parkhomenko, Irina, Vlasukova, Liudmila, Milchanin, Oleg, Żuk, Jerzy, Wendler, Elke, Romanov, Ivan, Korolik, Olga, Togambayeva, Altynai

    Published in Surface & coatings technology (15-12-2018)
    “…ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn+ and Se+ ions at 500 °C. After implantation…”
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    Journal Article
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    Surface modification of PET membrane by ion implantation by Drabik, Marcin, Dworecki, Kazimierz, Tańczyk, Roman, Wąsik, Sławomir, Żuk, Jerzy

    Published in Vacuum (15-06-2007)
    “…Semicrystalline poly(ethylene terephtalate) (PET) foils were irradiated with N 5+, O 7+ and C 3+ ions. Ions beams of 50 keV N 5+, 70 keV O 7+ and 30 keV C 3+…”
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    Journal Article
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    ION 2002 by Michalak, Leszek, Mączka, Dariusz, Żuk, Jerzy

    Published in Vacuum (10-03-2003)
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    Journal Article
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    Editorial by Michalak, Leszek, Mączka, Dariusz, Żuk, Jerzy

    Published in Vacuum (01-05-2005)
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    Journal Article
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    n-InAs Nanopyramids Fully Integrated into Silicon by Prucnal, Slawomir, Facsko, Stefan, Baumgart, Christine, Schmidt, Heidemarie, Liedke, Maciej Oskar, Rebohle, Lars, Shalimov, Artem, Reuther, Helfried, Kanjilal, Aloke, Mücklich, Arndt, Helm, Manfred, Zuk, Jerzy, Skorupa, Wolfgang

    Published in Nano letters (13-07-2011)
    “…InAs with an extremely high electron mobility (up to 40 000 cm2/V s) seems to be the most suitable candidate for better electronic devices performance. Here we…”
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    Journal Article
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    III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy by Prucnal, Slawomir, Glaser, Markus, Lugstein, Alois, Bertagnolli, Emmerich, Stöger-Pollach, Michael, Zhou, Shengqiang, Helm, Manfred, Reichel, Denis, Rebohle, Lars, Turek, Marcin, Zuk, Jerzy, Skorupa, Wolfgang

    Published in Nano research (01-12-2014)
    “…Direct integration of high-mobility III–V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms…”
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    Journal Article
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    semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy by Slawomir Prucnal Markus Glaser Alois Lugstein Emmerich Bertagnolli Michael Stoger-Pollach Shengqiang Zhou Manfred Helm Denis Reichel Lars Rebohle Marcin Turek Jerzy Zuk Wolfgang Skorupa

    Published in 纳米研究:英文版 (2014)
    “…Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms…”
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    Journal Article
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    Sensitization of the Blue-green Electroluminescence by Gadolinium Coupled to Si Nanocluster Embedded in a SiO(2) Matrix by Prucnal, Slawomir, Rebohle, Lars, Sun, Jiaming, Skorupa, Wolfgang, Drozdziel, Andrzej, Pyszniak, Krzysztof, Turek, Marcin, Filiks, Janusz, Zuk, Jerzy

    Published in Medžiagotyra (01-01-2013)
    “…In this work an enhancement of the blue and green electroluminescence (EL) related to silicon inclusions into SiO(2) layer by gadolinium co-doping was…”
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    Journal Article
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    Y-chromosome hyperploidy in Rumex by Zuk, J

    Published in Theoretical and applied genetics (1970)
    “…1. Male and female Y-chromosome hyperploid plants were obtained and morphologically and cytologically investigated. 2. Conjugation of sex chromosomes was…”
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    Journal Article
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    Function ofY chromosomes inRumex thyrsijlorus by Zuk, J

    Published in Theoretical and applied genetics (01-03-1970)
    “…1. Numerous polyploid and diploid plants ofR. thyrsiflorus with various numbers ofX andY chromoso mes were obtained. Analysis of these plants confirmed earlier…”
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    Journal Article