Search Results - "Šimonka, Vito"

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation by Šimonka, Vito, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation…”
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Stochastic simulation of the circadian rhythmicity in the SCN neuronal network by Šimonka, Vito, Fras, Maja, Gosak, Marko

“…The suprachiasmatic nucleus (SCN) of the hypothalamus is the mammalian circadian pacemaker that plays a dominant role in the generation and control of daily…”
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Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation by Šimonka, Vito, Nawratil, Georg, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for…”
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Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide by Simonka, Vito, Hossinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…Accurate modeling of the electrical properties of impurities in semiconductors is essential for the mandatory support of the development of novel semiconductor…”
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Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics by Toifl, Alexander, Simonka, Vito, Hossinger, Andreas, Selberherr, Siegfried, Grasser, Tibor, Weinbub, Josef

“…Technological control of doped regions is exceptionally important for all semiconductor devices. For the wide bandgap semiconductor silicon carbide, the…”
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Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide by Simonka, Vito, Hossinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We propose an empirical model to accurately predict electrical activation ratios of phosphorus and nitrogen implanted silicon carbide for arbitrary annealing…”
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Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride by Toifl, Alexander, Simonka, Vito, Hossinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

“…We propose a steady-state empirical activation model for the prediction of the electrical activation efficiency of silicon-implanted gallium nitride. Our model…”
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Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation by Simonka, Vito, Hossinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We investigate the anisotropic behavior of dry and wet thermal oxidation of silicon carbide for which a high-accuracy three-dimensional simulation model is…”
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Comprehensive design solutions for wide bandgap power electronics by Tao, Sun, Zhao, Qingda, Simonka, Vito, Hoessinger, Andreas, Guichard, Eric

“…Wide bandgap (WBG) semiconductors hold great promise to significantly outperform and eventually replace traditional silicon-based power electronics (PE)…”
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Direction dependent three-dimensional silicon carbide oxidation growth rate calculations by Simonka, Vito, Nawratil, Georg, Hossinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We propose a direction dependent interpolation method for silicon carbide oxidation growth rates and we compute these rates for three-dimensional simulations…”
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