Search Results - "Ściana Beata"

Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell by Dawidowski, Wojciech, Ściana, Beata, Zborowska-Lindert, Iwona, Mikolášek, Miroslav, Kováč, Jaroslav, Tłaczała, Marek

“…•Tandem J-V characteristics reveal tunnel junction failure.•Tunnel junction properties different when grown separately that in tandem device.•Insufficient…”
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Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings by Mikulicz, Monika, Rygała, Michał, Smołka, Tristan, Janczak, Mikołaj, Badura, Mikołaj, Łozińska, Adriana, Wolf, Adriana, Emmerling, Monika, Ściana, Beata, Höfling, Sven, Czyszanowski, Tomasz, Sęk, Grzegorz, Motyka, Marcin

“…We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy…”
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Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE by Ściana, Beata, Dawidowski, Wojciech, Radziewicz, Damian, Jadczak, Joanna, López-Escalante, Mari Cruz, González de la Cruz, Victor, Gabás, Mercedes

“…This work presents an investigation of the fully strained GaAsN/GaAs heterostructures obtained by atmospheric pressure metalorganic vapor phase epitaxy,…”
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Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell by Dawidowski, Wojciech, Ściana, Beata, Bielak, Katarzyna, Mikolášek, Miroslav, Drobný, Jakub, Serafińczuk, Jarosław, Lombardero, Iván, Radziewicz, Damian, Kijaszek, Wojciech, Kósa, Arpád, Florovič, Martin, Kováč, Jaroslav, Algora, Carlos, Stuchlíková, L’ubica

“…Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future…”
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Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules by Pucicki, Damian, Bielak, Katarzyna, Badura, Mikołaj, Dawidowski, Wojciech, Ściana, Beata

“…In this work authors present the results of structural and optical characterization of the GaInNAs/GaAs MQW structures grown by AP-MOVPE. The growth conditions…”
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A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures by Szyszka, Adam, Dawidowski, Wojciech, Stafiniak, Andrzej, Prażmowska, Joanna, Ściana, Beata, Tłaczała, Marek

“…Scanning Capacitance Microscopy was applied in investigation of individual components of tandem solar cell. The InGaAs tunnel junction, GaAs top subcell and…”
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The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics by Dawidowski, Wojciech, Ściana, Beata, Zborowska-Lindert, Iwona, Mikolášek, Miroslav, Bielak, Katarzyna, Badura, Mikołaj, Pucicki, Damian, Radziewicz, Damian, Kováč, Jaroslav, Tłaczała, Marek

“…[Display omitted] •Single diode model of solar cell was applied to determine device parameters.•Illuminated I–V characteristics of dilute nitride solar cell…”
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Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance by Pierścińska, Dorota, Pierściński, Kamil, Gutowski, Piotr, Badura, Mikołaj, Sobczak, Grzegorz, Serebrennikova, Olga, Ściana, Beata, Tłaczała, Marek, Bugajski, Maciej

“…In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated…”
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AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell by Dawidowski, Wojciech, Šciana, Beata, Zborowska-Lindert, Iwona, Mikolášek, Miroslav, Latkowska, Magdalena, Radziewicz, Damian, Pucicki, Damian, Bielak, Katarzyna, Badura, Mikołaj, Kováč, Jaroslav, Tłaczała, Marek

“…Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most…”
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Simulations of AlGaAs/GaAs heterojunction phototransistors by Ściana Beata, Panek Marek, Borczuch Artur, Tłaczała Marek

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Electrical characterization of the AIIIBV-N heterostructures by capacitance methods by Stuchlíková, Ľubica, Harmatha, Ladislav, Petrus, Miroslav, Rybár, Jakub, Šebok, Ján, Ściana, Beata, Radziewicz, Damian, Pucicki, Damian, Tłaczała, Marek, Kósa, Arpád, Benko, Peter, Kováč, Jaroslav, Juhász, Peter

“…► Three MQW InGaAsN/GaAs heterostructures with various nitrogen ratios were compared. ► CV method and Deep Level Transient Spectroscopy measurements were used…”
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AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE by Ściana, Beata, Zborowska-Lindert, Iwona, Radziewicz, Damian, Boratyński, Bogusław, Tłaczała, Marek, Kováč, Jaroslav, Srnanek, Rudolf, Škriniarová, Jaroslava, Florovič, Martin

“…Heterojunction bipolar phototransistors (HPTs), based on GaAs technology, are widely used in the optoelectronic-integrated circuit (OEIC) [H.T. Lin, D.H. Rich,…”
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Concept of the InGaAs Plasmonic Waveguide for Quantum Cascade Laser Applications by Lozinska, Adriana, Badura, Mikolaj, Sciana, Beata

“…Quantum cascade lasers are sophisticated devices mostly based on InGaAs/AlInAs/InP heterostructures to improve thermal performance. Their structure consists of…”
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GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications by Bielak, Katarzyna, Pucicki, Damian, Dawidowski, Wojciech, Badura, Mikolaj, Sciana, Beata, Tlaczala, Marek

“…The inhomogeneities of multicomponent semiconductor alloys, as well as phase segregation, can be utilized for enhancement of photodetector absorption…”
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Diffraction Properties and Application of 3D Polymer Woodpile Photonic Crystal Structure by Urbancova, Petra, Pudis, Dusan, Goraus, Matej, Suslik, Lubos, Sciana, Beata, Dawidowski, Wojciech, Kovac jr, Jaroslav, Skriniarova, Jaroslava

“…We present a new technique for modification of diffraction and optical properties of photonic devices by surface application of polymer Three-Dimensional (3D)…”
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Composition Related Electrical Active Defect States of InGaAs and GaAsN by Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

“…This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for…”
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AP-MOVPE growth and characterization of GaAs1-xNx epilayers by Pucicki, Damian, Sciana, Beata, Radziewicz, Damian, Tlaczala, Marek, Sek, Grzegorz, Poloczek, Przemyslaw, Serafinczuk, Jaroslaw, Kozlowski, Janusz

“…Nitrogen incorporation into GaAs epilayers has received interest especially due to band gap decreasing of resultant material. Small fraction of nitrogen makes…”
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Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy by Stuchlikova, Lubica, Sciana, Beata, Kosa, Arpad, Matus, Matej, Benko, Peter, Marek, Juraj, Donoval, Martin, Dawidowski, Wojciech, Radziewicz, Damian, Weis, Martin

“…Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly…”
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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions by Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

“…In this article Deep Level Transient Fourier Spectroscopy experiments and various evaluation procedures were used to study emission and capture processes of…”
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DLTS Study of InGaAsN/GaAs p-i-n Diode by Jakub Rybar, Lubica Stuchlikova, Ladislav Harmatha, Juraj Jakus, Jaroslav Kovac, Beata Sciana, Damian Radziewicz, Damian Pucicki, Wojciech Dawidowski, Marek Tlaczala

“…The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were…”
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