Search Results - "Łodziński, M."

Eye safe emission in Tm3+/Ho3+ and Yb3+/Tm3+ co-doped optical fibers fabricated using MCVD-CDS system by Miluski, P., Kochanowicz, M., Żmojda, J., Dorosz, D., Łodziński, M., Baranowska, A., Dorosz, J.

“…The RE-co-doped silica optical fibers emitting in the eye-safe spectral range are still attractive for new applications like LIDAR, pollution monitoring,…”
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Chemical and spectroscopic characterization of some phosphate accessory minerals from pegmatites of the Sowie Góry Mts, SW Poland by Łodziński, M., Sitarz, M.

“…Aggregates of phosphate accessory minerals from the Michałkowa pegmatite in the Sowie Góry Mts, Lower Silesia, southwestern Poland were studied by means of…”
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Micro-Raman spectroscopy studies of some accessory minerals from pegmatites of the Sowie Mts and Strzegom-Sobótka massif, Lower Silesia, Poland by Łodziński, M., Wrzalik, R., Sitarz, M.

“…The application of Raman microprobe is given for identification of natural, accessory minerals from pegmatites of the Sudety Mts (south-west Poland)…”
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ICP, IR, Raman, NMR investigations of beryls from pegmatites of the Sudety Mts by Łodziński, M., Sitarz, M., Stec, K., Kozanecki, M., Fojud, Z., Jurga, S.

“…Detailed ICP, IR, Raman and NMR investigation were performed for more than 50 samples of beryls from pegmatites in the Sudety Mts. MIR spectra were measured at…”
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Si/SiC bonded wafer: A route to carbon free SiO2 on SiC by Pérez-Tomás, A., Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, J. A., Burrows, S. E., Mawby, P. A.

“…This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to…”
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Investigation of the 4H–SiC surface by Guy, O.J., Lodzinski, M., Teng, K.S., Maffeis, T.G.G., Tan, M., Blackwood, I., Dunstan, P.R., Al-Hartomy, O., Wilks, S.P., Wilby, T., Rimmer, N., Lewis, D., Hopkins, J.

“…The silicon carbide (SiC) surface is more complex than that of silicon and can be carbon-terminated or silicon-terminated, and can exist as several…”
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Si/SiC bonded wafer: A route to carbon free SiO 2 on SiC by Pérez-Tomás, A., Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, J. A., Burrows, S. E., Mawby, P. A.

“…This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to…”
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Confocal Raman microscopy in 3-dimensional shape and composition determination of heterogeneous systems by Pastorczak, M., Wiatrowski, M., Kozanecki, M., Lodzinski, M., Ulanski, J.

“…Heterogeneous materials with special properties dedicated for specific applications attract a lot of interest due to the possibility of designing tailor-made…”
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Minimal residual disease analysis in children with t(12;21)-positive acute lymphoblastic leukemia: comparison of Ig/TCR rearrangements and the genomic fusion gene by Metzler, M, Mann, G, Monschein, U, Lodzinski, M, Gall, C, Flohr, T, Viehmann, S, Langer, T, Schrappe, M, Gadner, H, Haas, OA, Panzer-Grumayer, ER

“…Dept. of Paediatrics, University of Erlangen-Nurnberg, Erlangen, Germany. Quantification of minimal residual disease (MRD) based on clonotypic immunoglobulin/…”
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Modification of Schottky interface by the inclusion of DNA interlayer to create metal / organic / inorganic structures by Batcup, S., Wills, J., Lodzinski, M., Wright, C., Doak, S., Holland, P., Igic, P.

“…In this paper, we describe the fabrication and testing of the organic/inorganic Al/DNA/Si Schottky diodes. DNA interlayers are introduced into silicon…”
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Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems by Guy, O.J., Lodzinski, M., Castaing, A., Igic, P.M., Perez-Tomas, A., Jennings, M.R., Mawby, P.A.

“…Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have…”
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Characterization of MOS interfaces on protected and un-protected 4H-SiC surfaces by Lodzinski, M., Perez-Tomas, A., Guy, O.J., Penny, M., Batcup, S., Al-Hartomy, O.A., Dunstan, P., Wilks, S., Igic, P.

“…In this paper, we present investigations performed on 4H-SiC surfaces annealed at high temperature in the presence of a protective carbon cap and compare these…”
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