Search Results - "[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs"

Realization of high breakdown voltage (>700 V) in thin SOI devices by Merchant, S., Arnold, E., Baumgart, H., Mukherjee, S., Pein, H., Pinker, R.

“…The avalanche breakdown voltage of silicon on insulator (SOI) lateral diodes is investigated theoretically and experimentally. Theoretically, a condition is…”
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Extension of RESURF principle to dielectrically isolated power devices by Huang, Y.S., Baliga, B.J.

“…The RESURF (reduced surface field) principle has been extended to dielectrically isolated power devices including the effect of the formation of an inversion…”
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A novel soft and fast recovery diode (SFD) with thin p-layer formed by Al-Si electrode by Mori, M., Yasuda, Y., Sakurai, N., Sugawara, Y.

“…A novel, soft and fast recovery diode (SFD) is presented which has extremely thin p-layers formed by an Al-Si electrode and deep p/sup +/-layers. By using the…”
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Analysis of silicon carbide power device performance by Bhatnagar, M., Baliga, B.J.

“…The authors attempt to define the drift region properties of SiC based rectifiers and MOSFETs to achieve breakdown voltages ranging from 50 to 5000 V. Using…”
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A novel high voltage three-phase monolithic inverter IC with two current levels sensing by Miyazaki, H., Sakurai, N., Onda, K., Tanaka, T., Mori, M., Wada, M., Matsuzaki, H.

“…A 250-V 1-A three-phase monolithic inverter IC (ECN3010) for variable-speed motor drives has been fabricated. Six insulated-gate bipolar transistors (IGBTs)…”
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The base resistance controlled thyristor (BRT)-a new MOS gated power thyristor by Nandakumar, M., Baliga, B.J., Shekar, M.S., Tandon, S., Reisman, A.

“…A novel MOS gated thyristor structure called the base resistance controlled thyristor is proposed. In this device structure, turn off of a thyristor built with…”
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Impact of dielectric isolation technology on power ICs by Nakagawa, A.

“…The impact and advantages of dielectric isolation (DI) are discussed, and the directions of DI research are highlighted. It is noted that DI is a superior…”
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Integration of a 200 V, 60 MHz lateral PNP transistor with emitter-base self-aligned to polysilicon into a high voltage BiCMOS process by Masquelier, M.P., Okada, D.N.

“…A 200-V BV/sub CEO/ (breakdown voltage) lateral PNP transistor with improved frequency response over conventional designs has been designed and fabricated,…”
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600 V, 25 A dielectrically-isolated power IC with vertical IGBT by Mizoguchi, T., Shirasawa, T., Mori, M., Sugawara, Y.

“…To obtain IGBT (insulated gate bipolar transistor) integrated large current power ICs which are more compact and reliable, a DI (dielectric isolation)…”
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High switching speed 1500 V IGBT for CRT deflection circuit by Seki, Y., Hoshi, Y., Shimabukuro, H., Suganuma, N., Nishiura, A., Uchida, Y.

“…A novel 1500 V IGBT (insulated gate bipolar transistor) was developed for the CRT horizontal deflection circuit. The authors clarify the device characteristics…”
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High voltage silicon-on-insulator (SOI) MOSFETs by Lu, Q., Ratnam, P., Salama, C.A.T.

“…Novel lateral high-voltage SOI MOSFETs capable of withstanding up to 400 V are presented. The design optimization, fabrication, and experimental results…”
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Partial lifetime control in IGBT by helium irradiation through mask patterns by Akiyama, H., Harada, M., Kondoh, H., Akasaka, Y.

“…Partial lifetime control for IGBTs (insulated-gate bipolar transistors) performed by irradiated helium ions through a stainless steel mask is studied. This…”
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SIPOS-passivation for high voltage power devices with planar junction termination by Stockmeier, T., Lilja, K.

“…Power diodes have been fabricated with a planar junction termination suitable for breakdown voltages up to 6.2 kV. The devices were passivated with a double…”
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Fast LIGBT switching due to plasma confinement through pulse width control by Wacyk, I., Jayaraman, R., Casey, L., Sin, J.

“…The authors have examined the initial turn-on dynamics of the LIGBT (lateral insulated gate bipolar transistor) and shown through data and simulations that the…”
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Experimental demonstration of the emitter switched thyristor by Shekar, M.S., Baliga, B.J., Nandakumar, M., Tandon, S., Reisman, A.

“…The operation of 600 V forward blocking emitter switched thyristors (ESTs) has been experimentally demonstrated. The devices were fabricated using an IGBT…”
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Low on-resistance power LDMOSFET using double metal process technology by Hoshi, M., Mihara, T., Matsushita, T., Hirota, Y.

“…A low on-resistance lateral power FET which is suitable for the H-bridge motorcontrol IPD (intelligent power device) for automatic applications is described…”
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An analytical IGBT model for power circuit simulation by Shen, Z., Chow, T.P.

“…On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical CAD (computer-aided design) model for an IGBT…”
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Correlation between local segment characteristics and dynamic current redistribution in GTO power thyristors by Johnson, C.M., Jaecklin, A.A., Palmer, P.R., Streit, P.

“…The peak controllable current of a typical GTO (gate turn-off) thyristor is limited by the redistribution of anode current, occurring during the turn-off…”
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Electrothermal simulation of power semiconductor devices by Gough, P.A., Walker, P., Whight, K.R.

“…TESSA, a program designed to simulate the coupled electrothermal behavior of semiconductor devices in two and three dimensions, is discussed. The equations…”
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A scaled CMOS-compatible smart power IC technology by Wong, S.L., Kim, M.J., Young, J.C., Mukherjee, S.

“…An integrated VDMOS-based PIC process was developed to increase the cost effectiveness and performance of 60 V high current circuits. Compact 60 V CMOS…”
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